DOI: 10.1063/1.1708906. Photoemission of Electrons from Metals into Silicon Dioxide

Photoemission of Electrons from Metals into Silicon Dioxide

10.1063/1.1708906

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Metal-insulator contacts have been prepared by evaporating partially transparent metal electrodes onto a thermally grown silicon dioxide layer. The metals employed were Mg, Al, Ag, Cr, Cu, Au, Ni, Pd, and Pt. Photoemission of electrons from the metal electrode into the oxide conduction band has been observed in each case. The photoelectric threshold energy φT for this process depends primarily upon the metal employed and is consistent with the relation φT=φM−χ, where φM is the vacuum value of the metal work function and χ, the electron affinity of the oxide, is 1.0 eV.

Bibliography

Goodman, A. M., & OâNeill, J. J. (1966). Photoemission of Electrons from Metals into Silicon Dioxide. Journal of Applied Physics, 37(9), 3580â3583.

Authors 2

Alvin M. Goodman (first)
John J. O'Neill (additional)

References 14 Referenced 72

10.1103/PhysRev.140.A569 / Phys. Rev. (1965)
10.1103/PhysRev.144.588 / Phys. Rev. (1966)
{'key': '2024020209040750700_r3'}
10.1103/PhysRev.38.45 / Phys. Rev. (1931)
{'key': '2024020209040750700_r5'}
10.1103/PhysRevLett.8.57 / Phys. Rev. Letters (1962)
10.1063/1.1729121 / J. Appl. Phys. (1963)
10.1103/PhysRev.127.2006 / Phys. Rev. (1962)
{'key': '2024020209040750700_r9'}
{'key': '2024020209040750700_r10'}
10.1063/1.1754243 / Appl. Phys. Letters (1965)
{'key': '2024020209040750700_r12'}
{'key': '2024020209040750700_r13'}
10.1063/1.1742493 / J. Chem. Phys. (1956)

Dates

Type	When
Created	20 years, 4 months ago (April 22, 2005, 1:06 p.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 5:13 a.m.)
Indexed	1 year, 6 months ago (Feb. 9, 2024, 7:35 p.m.)
Issued	59 years ago (Aug. 1, 1966)
Published	59 years ago (Aug. 1, 1966)
Published Print	59 years ago (Aug. 1, 1966)

Funders 0

None

BibTeX

@article{Goodman_1966, title={Photoemission of Electrons from Metals into Silicon Dioxide}, volume={37}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1708906}, DOI={10.1063/1.1708906}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Goodman, Alvin M. and O’Neill, John J.}, year={1966}, month=aug, pages={3580–3583} }

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