DOI: 10.1063/1.1708082. Creep of Intrinsic and Gallium-Doped Germanium

Creep of Intrinsic and Gallium-Doped Germanium

10.1063/1.1708082

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The strain-time characteristics of germanium crystals bent by a constant four point load were studied at temperatures between 450° and 550°C. Bar specimens oriented for single slip were prepared from intrinsic crystals and from p-type crystals heavily doped with gallium; dislocation densities of all specimens before bending were &lt;400 cm−2. The heavy gallium doping prolongs the duration of the initial region of the strain-time curve, which is characterized by an increasing strain rate, and retards the stationary strain rate of the second region. The temperature dependence of the stationary strain rate is described by an activation energy of 1.65 eV for the intrinsic and 1.75 eV for the p-type material. Both the temperature dependence of the creep parameters and the retarding effects of gallium doping reflect the characteristics of dislocation velocities in these crystals.

Bibliography

Shea, M. M., Hendrickson, L. E., & Heldt, L. A. (1966). Creep of Intrinsic and Gallium-Doped Germanium. Journal of Applied Physics, 37(12), 4572â4574.

Authors 3

M. M. Shea (first)
L. E. Hendrickson (additional)
L. A. Heldt (additional)

References 19 Referenced 9

10.1016/S0031-8914(58)80098-1 / Physica (1958)
10.1016/0031-8914(59)90002-3 / Physica (1959)
10.1063/1.1702540 / J. Appl. Phys. (1962)
{'key': '2024020209114720300_r3a', 'first-page': '240', 'volume': '34', 'year': '1963', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1963)
10.1103/PhysRev.131.54 / Phys. Rev. (1963)
10.1063/1.1702958 / J. Appl. Phys. (1965)
{'key': '2024020209114720300_r6'}
10.1103/PhysRev.143.601 / Phys. Rev. (1966)
{'key': '2024020209114720300_r8'}
{'key': '2024020209114720300_r9', 'first-page': '340', 'volume': '21', 'year': '1959', 'journal-title': 'Philips Tech. Rev.'} / Philips Tech. Rev. (1959)
10.1016/0031-8914(59)90003-5 / Physica (1959)
10.1080/14786436208213163 / Phil. Mag. (1962)
10.1039/df9643800191 / Discussions Faraday Soc. (1964)
10.1147/rd.54.0279 / IBM J. Res. Develop. (1961)
10.1063/1.1702538 / J. Appl. Phys. (1962)
10.1063/1.1714577 / J. Appl. Phys. (1965)
10.1103/PhysRev.106.73 / Phys. Rev. (1957)
{'key': '2024020209114720300_r16', 'first-page': '598', 'volume': '5', 'year': '1957', 'journal-title': 'Acta Met.'} / Acta Met. (1957)
10.1103/PhysRev.131.58 / Phys. Rev. (1963)

Dates

Type	When
Created	20 years, 4 months ago (April 22, 2005, 1:06 p.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 5:20 a.m.)
Indexed	1 year, 6 months ago (Feb. 2, 2024, 5:43 a.m.)
Issued	58 years, 9 months ago (Nov. 1, 1966)
Published	58 years, 9 months ago (Nov. 1, 1966)
Published Print	58 years, 9 months ago (Nov. 1, 1966)

Funders 0

None

BibTeX

@article{Shea_1966, title={Creep of Intrinsic and Gallium-Doped Germanium}, volume={37}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1708082}, DOI={10.1063/1.1708082}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Shea, M. M. and Hendrickson, L. E. and Heldt, L. A.}, year={1966}, month=nov, pages={4572–4574} }

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