Abstract
Hall measurements of GaP crystals grown by several different methods and doped with S, Te, Si, and Ge show n-type behavior with donor concentrations ranging from 1016 to 1019 cm−3. Binding energies for the donor states at concentrations of 1018 cm−3 were estimated at 0.089±0.020 eV for S, 0.076±0.020 eV for Te, and 0.078±0.020 eV for Si. The electron mobility was usually between 60 and 100 cm2/V-sec at room temperature and varied widely with temperature.
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Dates
Type | When |
---|---|
Created | 20 years, 4 months ago (April 22, 2005, 12:39 p.m.) |
Deposited | 1 year, 7 months ago (Feb. 2, 2024, 4:52 a.m.) |
Indexed | 1 year, 7 months ago (Feb. 5, 2024, 2 a.m.) |
Issued | 59 years, 11 months ago (Oct. 1, 1965) |
Published | 59 years, 11 months ago (Oct. 1, 1965) |
Published Print | 59 years, 11 months ago (Oct. 1, 1965) |
@article{Montgomery_1965, title={Hall-Effect Measurements of n-Type Gallium Phosphide}, volume={36}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1702954}, DOI={10.1063/1.1702954}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Montgomery, H. C. and Feldmann, W. L.}, year={1965}, month=oct, pages={3228–3232} }