DOI: 10.1063/1.1702605. Piezoresistive Properties of Silicon Diffused Layers

Piezoresistive Properties of Silicon Diffused Layers

10.1063/1.1702605

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The piezoresistive properties of n- and p-type layers formed by the diffusion of impurities into silicon have been investigated. The values of the three piezoresistance coefficients and the temperature dependence of the large coefficients have been measured on layers having surface concentration values from 1018 to 1021 cm−3. The piezoresistance effect in p-type diffused layers follows qualitatively the behavior expected in a degenerate semiconductor. n-type layers having high surface concentration values show a change in the symmetry of the piezoresistance effect at room temperature and a decrease in the coefficient π11 at lower temperatures. A discussion of the piezoresistance effect in diffused layers and its relation to the piezoresistance effect in uniformly doped material is also given.

Bibliography

Tufte, O. N., & Stelzer, E. L. (1963). Piezoresistive Properties of Silicon Diffused Layers. Journal of Applied Physics, 34(2), 313â318.

Authors 2

O. N. Tufte (first)
E. L. Stelzer (additional)

References 23 Referenced 287

10.1063/1.1728280 / J. Appl. Phys. (1961)
10.1063/1.1931164 / J. Appl. Phys. (1962)
10.1103/PhysRev.94.42 / Phys. Rev. (1954)
10.1103/PhysRev.105.525 / Phys. Rev. (1957)
{'key': '2024020206431122600_r5'}
{'key': '2024020206431122600_r5a'}
10.1016/0038-1101(61)90029-6 / Solid-State Electron. (1961)
10.1002/j.1538-7305.1958.tb03882.x / Bell System Tech. J. (1958)
10.1149/1.2425378 / J. Electrochem. Soc. (1962)
{'key': '2024020206431122600_r8'}
10.1063/1.1728326 / J. Appl. Phys. (1961)
{'key': '2024020206431122600_r10', 'first-page': '427', 'volume': 'A59', 'year': '1957', 'journal-title': 'J. Res. Natl. Bur. Std.'} / J. Res. Natl. Bur. Std. (1957)
10.1103/PhysRev.99.388 / Phys. Rev. (1955)
10.1121/1.1908710 / J. Acoust. Soc. Am. (1957)
10.1103/PhysRev.111.798 / Phys. Rev. (1958)
{'key': '2024020206431122600_r14'}
{'key': '2024020206431122600_r15', 'first-page': '136', 'volume': '1', 'year': '1959', 'journal-title': 'Soviet Phys.-Solid State'} / Soviet Phys.-Solid State (1959)
{'key': '2024020206431122600_r15a', 'first-page': '1502', 'volume': '1', 'year': '1960', 'journal-title': 'Sov. Phys. Solid State'} / Sov. Phys. Solid State (1960)
{'key': '2024020206431122600_r16'}
10.1103/PhysRev.75.865 / Phys. Rev. (1949)
10.1103/PhysRev.96.28 / Phys. Rev. (1954)
10.1103/PhysRev.101.944 / Phys. Rev. (1956)
10.1063/1.1728796 / J. Appl. Phys. (1962)

Dates

Type	When
Created	20 years, 4 months ago (April 22, 2005, 12:31 p.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 1:43 a.m.)
Indexed	3 days, 13 hours ago (Aug. 21, 2025, 12:59 p.m.)
Issued	62 years, 6 months ago (Feb. 1, 1963)
Published	62 years, 6 months ago (Feb. 1, 1963)
Published Print	62 years, 6 months ago (Feb. 1, 1963)

Funders 0

None

BibTeX

@article{Tufte_1963, title={Piezoresistive Properties of Silicon Diffused Layers}, volume={34}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1702605}, DOI={10.1063/1.1702605}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Tufte, O. N. and Stelzer, E. L.}, year={1963}, month=feb, pages={313–318} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        21
      ]
    ],
    "date-time": "2025-08-21T16:59:02Z",
    "timestamp": 1755795542545
  },
  "reference-count": 23,
  "publisher": "AIP Publishing",
  "issue": "2",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1963,
        2,
        1
      ]
    ]
  },
  "abstract": "<jats:p>The piezoresistive properties of n- and p-type layers formed by the diffusion of impurities into silicon have been investigated. The values of the three piezoresistance coefficients and the temperature dependence of the large coefficients have been measured on layers having surface concentration values from 1018 to 1021 cm\u22123. The piezoresistance effect in p-type diffused layers follows qualitatively the behavior expected in a degenerate semiconductor. n-type layers having high surface concentration values show a change in the symmetry of the piezoresistance effect at room temperature and a decrease in the coefficient \u03c011 at lower temperatures. A discussion of the piezoresistance effect in diffused layers and its relation to the piezoresistance effect in uniformly doped material is also given.</jats:p>",
  "DOI": "10.1063/1.1702605",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2005,
        4,
        22
      ]
    ],
    "date-time": "2005-04-22T16:31:53Z",
    "timestamp": 1114187513000
  },
  "page": "313-318",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 287,
  "title": "Piezoresistive Properties of Silicon Diffused Layers",
  "prefix": "10.1063",
  "volume": "34",
  "author": [
    {
      "given": "O. N.",
      "family": "Tufte",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Honeywell Research Center, Hopkins, Minnesota"
        }
      ]
    },
    {
      "given": "E. L.",
      "family": "Stelzer",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Honeywell Research Center, Hopkins, Minnesota"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020206431122600_r1",
      "doi-asserted-by": "crossref",
      "first-page": "2008",
      "DOI": "10.1063/1.1728280",
      "volume": "32",
      "year": "1961",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020206431122600_r2",
      "doi-asserted-by": "crossref",
      "first-page": "3322",
      "DOI": "10.1063/1.1931164",
      "volume": "33",
      "year": "1962",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020206431122600_r3",
      "doi-asserted-by": "crossref",
      "first-page": "42",
      "DOI": "10.1103/PhysRev.94.42",
      "volume": "94",
      "year": "1954",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020206431122600_r4",
      "doi-asserted-by": "crossref",
      "first-page": "525",
      "DOI": "10.1103/PhysRev.105.525",
      "volume": "105",
      "year": "1957",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020206431122600_r5"
    },
    {
      "key": "2024020206431122600_r5a"
    },
    {
      "key": "2024020206431122600_r6",
      "doi-asserted-by": "crossref",
      "first-page": "123",
      "DOI": "10.1016/0038-1101(61)90029-6",
      "volume": "2",
      "year": "1961",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "2024020206431122600_r6a",
      "doi-asserted-by": "crossref",
      "first-page": "699",
      "DOI": "10.1002/j.1538-7305.1958.tb03882.x",
      "volume": "37",
      "year": "1958",
      "journal-title": "Bell System Tech. J."
    },
    {
      "key": "2024020206431122600_r7",
      "doi-asserted-by": "crossref",
      "first-page": "235",
      "DOI": "10.1149/1.2425378",
      "volume": "109",
      "year": "1962",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020206431122600_r8"
    },
    {
      "key": "2024020206431122600_r9",
      "doi-asserted-by": "crossref",
      "first-page": "2050",
      "DOI": "10.1063/1.1728326",
      "volume": "32",
      "year": "1961",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020206431122600_r10",
      "first-page": "427",
      "volume": "A59",
      "year": "1957",
      "journal-title": "J. Res. Natl. Bur. Std."
    },
    {
      "key": "2024020206431122600_r11",
      "doi-asserted-by": "crossref",
      "first-page": "388",
      "DOI": "10.1103/PhysRev.99.388",
      "volume": "99",
      "year": "1955",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020206431122600_r12",
      "doi-asserted-by": "crossref",
      "first-page": "1096",
      "DOI": "10.1121/1.1908710",
      "volume": "29",
      "year": "1957",
      "journal-title": "J. Acoust. Soc. Am."
    },
    {
      "key": "2024020206431122600_r13",
      "doi-asserted-by": "crossref",
      "first-page": "798",
      "DOI": "10.1103/PhysRev.111.798",
      "volume": "111",
      "year": "1958",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020206431122600_r14"
    },
    {
      "key": "2024020206431122600_r15",
      "first-page": "136",
      "volume": "1",
      "year": "1959",
      "journal-title": "Soviet Phys.-Solid State"
    },
    {
      "key": "2024020206431122600_r15a",
      "first-page": "1502",
      "volume": "1",
      "year": "1960",
      "journal-title": "Sov. Phys. Solid State"
    },
    {
      "key": "2024020206431122600_r16"
    },
    {
      "key": "2024020206431122600_r17",
      "doi-asserted-by": "crossref",
      "first-page": "865",
      "DOI": "10.1103/PhysRev.75.865",
      "volume": "75",
      "year": "1949",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020206431122600_r18",
      "doi-asserted-by": "crossref",
      "first-page": "28",
      "DOI": "10.1103/PhysRev.96.28",
      "volume": "96",
      "year": "1954",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020206431122600_r19",
      "doi-asserted-by": "crossref",
      "first-page": "944",
      "DOI": "10.1103/PhysRev.101.944",
      "volume": "101",
      "year": "1956",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020206431122600_r20",
      "doi-asserted-by": "crossref",
      "first-page": "1618",
      "DOI": "10.1063/1.1728796",
      "volume": "33",
      "year": "1962",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/34/2/313/18328239/313_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/34/2/313/18328239/313_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        2
      ]
    ],
    "date-time": "2024-02-02T06:43:26Z",
    "timestamp": 1706856206000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/34/2/313/163772/Piezoresistive-Properties-of-Silicon-Diffused"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1963,
        2,
        1
      ]
    ]
  },
  "references-count": 23,
  "journal-issue": {
    "issue": "2",
    "published-print": {
      "date-parts": [
        [
          1963,
          2,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1702605",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1963,
        2
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1963,
        2,
        1
      ]
    ]
  }
}