DOI: 10.1063/1.1702574. Characteristics of <i>p-i-n</i> Junctions Produced by Ion-Drift Techniques in Silicon

Characteristics of p-i-n Junctions Produced by Ion-Drift Techniques in Silicon

10.1063/1.1702574

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

p-i-n junctions were fabricated by ion-drift techniques using lithium in p-type silicon. Highly compensated intrinsic regions from 0.1 to 5.0 mm were obtained. At temperatures between 120° and 200°C, the space charge of thermally generated carriers in the intrinsic region distorted the lithium ion distribution, producing linear graded junctions whose gradients were between 1011 and 1014 atoms/cm3/cm. Room-temperature capacitance measurements were used to determine the impurity distribution. Agreement was found between calculated and measured values of the impurity gradient. Precipitation of lithium ions in the intrinsic region was not observed. The increase of the direct current under reverse junction potential as a function of the increased width of the depletion region permitted measurement of the diffusion and depletion-region-generated current components. The value of the diffusion current component at any temperature was proportional to the resistivity of the p-type silicon. The depletion-region-generated component was proportional to the width of the depletion region.

Bibliography

Mayer, J. W. (1962). Characteristics of p-i-n Junctions Produced by Ion-Drift Techniques in Silicon. Journal of Applied Physics, 33(9), 2894â2902.

Authors 1

J. W. Mayer (first)

References 28 Referenced 40

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{'key': '2024020206295509300_r2', 'first-page': '99', 'volume': '7', 'year': '1955', 'journal-title': 'Z. angew Physik.'} / Z. angew Physik. (1955)
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Dates

Type	When
Created	20 years, 4 months ago (April 22, 2005, 12:31 p.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 1:30 a.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 4:46 p.m.)
Issued	62 years, 11 months ago (Sept. 1, 1962)
Published	62 years, 11 months ago (Sept. 1, 1962)
Published Print	62 years, 11 months ago (Sept. 1, 1962)

Funders 0

None

BibTeX

@article{Mayer_1962, title={Characteristics of p-i-n Junctions Produced by Ion-Drift Techniques in Silicon}, volume={33}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1702574}, DOI={10.1063/1.1702574}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Mayer, J. W.}, year={1962}, month=sep, pages={2894–2902} }

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  "abstract": "<jats:p>p-i-n junctions were fabricated by ion-drift techniques using lithium in p-type silicon. Highly compensated intrinsic regions from 0.1 to 5.0 mm were obtained. At temperatures between 120\u00b0 and 200\u00b0C, the space charge of thermally generated carriers in the intrinsic region distorted the lithium ion distribution, producing linear graded junctions whose gradients were between 1011 and 1014 atoms/cm3/cm. Room-temperature capacitance measurements were used to determine the impurity distribution. Agreement was found between calculated and measured values of the impurity gradient. Precipitation of lithium ions in the intrinsic region was not observed.</jats:p>\n               <jats:p>The increase of the direct current under reverse junction potential as a function of the increased width of the depletion region permitted measurement of the diffusion and depletion-region-generated current components. The value of the diffusion current component at any temperature was proportional to the resistivity of the p-type silicon. The depletion-region-generated component was proportional to the width of the depletion region.</jats:p>",
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