DOI: 10.1063/1.1695437. Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel

Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel

10.1063/1.1695437

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report on enhancement-mode ZnO-based field-effect transistors that utilize an acceptor-doped channel. In particular, the active channel is polycrystalline ZnO doped with Mg, to increase the band gap, and P, to decrease the electron carrier concentration. Devices are realized that display an on/off ratio of 103 and a channel mobility on the order of 5 cm2/V s. HfO2 serves as the gate dielectric. Capacitance–voltage properties measured across the gate indicate that the ZnO channel is n type. The use of acceptor doping improves the control of the initial channel conductance while having a minimal impact on channel mobility relative to undoped ZnO polycrystalline channels.

Bibliography

Kwon, Y., Li, Y., Heo, Y. W., Jones, M., Holloway, P. H., Norton, D. P., Park, Z. V., & Li, S. (2004). Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel. Applied Physics Letters, 84(14), 2685â2687.

Authors 8

Y. Kwon (first)
Y. Li (additional)
Y. W. Heo (additional)
M. Jones (additional)
P. H. Holloway (additional)
D. P. Norton (additional)
Z. V. Park (additional)
S. Li (additional)

References 20 Referenced 168

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Dates

Type	When
Created	21 years, 5 months ago (April 1, 2004, 6:04 p.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 9:50 p.m.)
Indexed	4 months, 2 weeks ago (April 21, 2025, 9:04 a.m.)
Issued	21 years, 5 months ago (April 5, 2004)
Published	21 years, 5 months ago (April 5, 2004)
Published Print	21 years, 5 months ago (April 5, 2004)

Funders 0

None

BibTeX

@article{Kwon_2004, title={Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel}, volume={84}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1695437}, DOI={10.1063/1.1695437}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kwon, Y. and Li, Y. and Heo, Y. W. and Jones, M. and Holloway, P. H. and Norton, D. P. and Park, Z. V. and Li, S.}, year={2004}, month=apr, pages={2685–2687} }

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