Abstract
The dc bias field dependence of the dielectric loss in SrTiO3 thin films deposited onto MgO substrate is investigated. The experimental data obtained at different frequencies of the ac field (8 and 16 GHz) from differently processed films (as deposited and oxygen annealed) strongly suggest the occurrence of a crossover in the dominant loss mechanism. The crossover is driven by the dc bias field: at weak fields the loss is governed by an extrinsic mechanism(s) whereas, at higher fields, the contribution of an intrinsic mechanism (dc field-induced quasi-Debye loss) becomes predominant.
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Dates
Type | When |
---|---|
Created | 21 years, 5 months ago (March 20, 2004, 4:30 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 9:46 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 3, 2024, 10:10 p.m.) |
Issued | 21 years, 4 months ago (March 29, 2004) |
Published | 21 years, 4 months ago (March 29, 2004) |
Published Print | 21 years, 4 months ago (March 29, 2004) |
@article{Astafiev_2004, title={Crossover between extrinsic and intrinsic dielectric loss mechanisms in SrTiO3 thin films at microwave frequencies}, volume={84}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1690878}, DOI={10.1063/1.1690878}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Astafiev, K. F. and Sherman, V. O. and Tagantsev, A. K. and Setter, N. and Kaydanova, T. and Ginley, D. S.}, year={2004}, month=mar, pages={2385–2387} }