DOI: 10.1063/1.1667606. Thickness dependent crystallization speed in thin phase change layers used for optical recording

Thickness dependent crystallization speed in thin phase change layers used for optical recording

10.1063/1.1667606

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The erasure rate of recorded amorphous marks in nanometers thick SbTe-alloy layers is studied as a function of layer thickness. We point out the presence of an optimum layer thickness where the crystallization speed is maximized. Analysis of the Gibbs free energy of a crystallite embedded in a thin amorphous film indicates that the height of the energy barrier for crystallization is a function of phase-change layer thickness. This barrier increases steeply in thin layers due to the larger surface energy at the crystallized phase-change surface. This suggests that the crystallization speed in thin films may be improved by modifying the interfaces of the phase-change layer.

Bibliography

Martens, H. C. F., Vlutters, R., & Prangsma, J. C. (2004). Thickness dependent crystallization speed in thin phase change layers used for optical recording. Journal of Applied Physics, 95(8), 3977â3983.

Authors 3

H. C. F. Martens (first)
R. Vlutters (additional)
J. C. Prangsma (additional)

References 19 Referenced 37

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{'key': '2024020718031642900_r5', 'first-page': '13', 'volume': '1–8', 'year': '2000', 'journal-title': 'Mater. Sci. Eng., A'} / Mater. Sci. Eng., A (2000)
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Dates

Type	When
Created	21 years, 4 months ago (March 25, 2004, 6:02 p.m.)
Deposited	1 year, 6 months ago (Feb. 7, 2024, 6:50 p.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 7:16 p.m.)
Issued	21 years, 4 months ago (April 15, 2004)
Published	21 years, 4 months ago (April 15, 2004)
Published Print	21 years, 4 months ago (April 15, 2004)

Funders 0

None

BibTeX

@article{Martens_2004, title={Thickness dependent crystallization speed in thin phase change layers used for optical recording}, volume={95}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1667606}, DOI={10.1063/1.1667606}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Martens, H. C. F. and Vlutters, R. and Prangsma, J. C.}, year={2004}, month=apr, pages={3977–3983} }

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