DOI: 10.1063/1.1662823. Refractive index of <i>n</i>-type gallium arsenide

Refractive index of n-type gallium arsenide

10.1063/1.1662823

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The index of refraction for n-type GaAs is calculated as a function of photon energy by a method which accounts for the contribution of the fundamental absorption edge to the index of refraction. The absorption coefficient for n-type GaAs near the band-gap energy is determined from experimental data; free-carrier absorption is not included in the calculations; however, its contribution to the index of refraction is estimated to have a negligible effect compared to that due to the fundamental edge. Some applications to single- and double-heterojunction (AlGa)As–GaAs laser structures are discussed. The results indicate that occasionally the most important factor contributing to radiation confinement to the optical cavity in laser structures is the index-of-refraction change due to the differences in doping of various regions. Index calculations are made by using absorption data on GaAs at 77 and 300°K. The difference in the index of refraction of a material with different doping can be pronounced. For example, an index change of 1.3% occurs due to differences in the absorption edge of crystals with dopings n = 2 × 1016 cm−3 and n = 6.5 × 1018 cm−3 at an energy of 1.48 eV and T = 77°K. However, the same crystals had a 0.89% index differential at E = 1.37 eV and T = 300°K. These calculations agree extremely well with the index-of-refraction differentials determined from radiation pattern characteristics of laser devices.

Bibliography

Zoroofchi, J., & Butler, J. K. (1973). Refractive index of n-type gallium arsenide. Journal of Applied Physics, 44(8), 3697â3699.

Authors 2

J. Zoroofchi (first)
J. K. Butler (additional)

References 16 Referenced 41

{'key': '2024020204572972700_r1'}
10.1103/PhysRev.129.1550 / Phys. Rev. (1963)
10.1103/PhysRev.133.A1653 / Phys. Rev. (1964)
10.1103/PhysRev.127.768 / Phys. Rev. (1962)
10.1063/1.1713601 / J. Appl. Phys. (1964)
10.1063/1.1777165 / J. Appl. Phys. (1962)
10.1103/PhysRev.133.A866 / Phys. Rev. (1964)
10.1063/1.1658263 / J. Appl. Phys. (1969)
{'key': '2024020204572972700_r9', 'first-page': '106', 'volume': '30', 'year': '1969', 'journal-title': 'RCA Rev. (Radio Corp. Am.)'} / RCA Rev. (Radio Corp. Am.) (1969)
10.1063/1.1660469 / J. Appl. Phys. (1971)
10.1063/1.1653284 / Appl. Phys. Lett. (1970)
10.1063/1.1659794 / J. Appl. Phys. (1971)
10.1063/1.1729077 / J. Appl. Phys. (1963)
10.1063/1.1753772 / Appl. Phys. Lett. (1963)
10.1063/1.1659159 / J. Appl. Phys. (1970)
10.1063/1.1661728 / J. Appl. Phys. (1972)

Dates

Type	When
Created	21 years, 6 months ago (Feb. 4, 2004, 12:26 p.m.)
Deposited	1 year, 6 months ago (Feb. 1, 2024, 11:57 p.m.)
Indexed	1 year ago (Aug. 2, 2024, 8:52 p.m.)
Issued	52 years ago (Aug. 1, 1973)
Published	52 years ago (Aug. 1, 1973)
Published Print	52 years ago (Aug. 1, 1973)

Funders 0

None

BibTeX

@article{Zoroofchi_1973, title={Refractive index of n-type gallium arsenide}, volume={44}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1662823}, DOI={10.1063/1.1662823}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zoroofchi, J. and Butler, J. K.}, year={1973}, month=aug, pages={3697–3699} }

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