Abstract
Experimental measurements on the transport properties in Pb1−xSnxTe single-crystal alloys at 77°K have been made as a function of both carrier concentration and composition. The measurements were made on p-type materials, primary interest being in the carrier concentration range where impurity scattering was clearly dominant (p≥1×1019 cm−3). The entire compositional range has been studied and the results reveal the following compositional regions with differing transport characteristics: (1) the region containing from 2- to 5-mol% SnTe, where there is a rapid decrease in hole mobility at any given carrier concentration, (2) the region from 5- to 37-mol%, where the hole mobilities are essentially independent of composition, (3) the region from 37- to 40-mol% SnTe, where a distinct discontinuity in the hole mobility occurs, and (4) the region from 40- to 100-mol% SnTe, where the hole mobility gradually increases with tin content.
References
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Dates
Type | When |
---|---|
Created | 21 years, 6 months ago (Feb. 9, 2004, 1:09 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 1, 2024, 10:09 p.m.) |
Indexed | 1 year, 5 months ago (March 13, 2024, 10:47 p.m.) |
Issued | 54 years, 3 months ago (May 1, 1971) |
Published | 54 years, 3 months ago (May 1, 1971) |
Published Print | 54 years, 3 months ago (May 1, 1971) |
@article{Wagner_1971, title={Carrier Mobilities in Pb1−xSnxTe Alloys}, volume={42}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1660573}, DOI={10.1063/1.1660573}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Wagner, John W. and Thompson, Alan G. and Willardson, Robert K.}, year={1971}, month=may, pages={2515–2518} }