DOI: 10.1063/1.1660569. Small-Signal Transient Double Injection in Semiconductors Heavily Doped with Deep Traps

Small-Signal Transient Double Injection in Semiconductors Heavily Doped with Deep Traps

10.1063/1.1660569

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The small signal transient response is discussed for double-injection diodes operating in the low injection square-law regime. This regime occurs, preceding the negative resistance regime, in long structures heavily doped with deep recombination centers. An expression is derived for the ac impedance, and the result is characterized by a simple equivalent circuit. The theory predicts that two distinct decay modes with different time constants, one each for electrons and holes, should be observed in the transient response. Experimental results for Au-doped Si p-i-n diodes with three different doping concentrations are presented. These show generally good agreement with the theory. In particular the time constants and the relative magnitudes of the two decay modes observed in p-type Si slightly overcompensated with Au agree well with those calculated using known values for the capture coefficients and mobilities.

Bibliography

Weber, W. H., Elliott, R. S., & Cederquist, A. L. (1971). Small-Signal Transient Double Injection in Semiconductors Heavily Doped with Deep Traps. Journal of Applied Physics, 42(6), 2497â2501.

Authors 3

Willes H. Weber (first)
R. S. Elliott (additional)
A. L. Cederquist (additional)

References 21 Referenced 5

10.1063/1.1782094 / J. Appl. Phys. (1966)
10.1063/1.1656089 / J. Appl. Phys. (1968)
10.1063/1.1657438 / J. Appl. Phys. (1969)
10.1063/1.1657439 / J. Appl. Phys. (1969)
10.1016/0031-8914(70)90229-6 / Physica (1970)
10.1016/0038-1101(70)90050-X / Solid State Electron. (1970)
10.1016/0038-1101(70)90051-1 / Solid State Electron. (1970)
{'key': '2024020203061803900_r8'}
10.1103/PhysRev.121.26 / Phys. Rev. (1961)
10.1103/PhysRev.125.126 / Phys. Rev. (1962)
10.1063/1.1713320 / J. Appl. Phys. (1964)
10.1016/0038-1101(70)90167-X / Solid State Electron. (1970)
10.1063/1.1653041 / Appl. Phys. Letters (1970)
10.1016/0038-1101(65)90036-5 / Solid State Electron. (1965)
{'key': '2024020203061803900_r15'}
10.1002/j.1538-7305.1960.tb03928.x / Bell System Tech. J. (1960)
10.1063/1.1655751 / J. Appl. Phys. (1968)
10.1103/PhysRev.101.1699 / Phys. Rev. (1956)
10.1063/1.1753780 / Appl. Phys. Letters (1963)
{'key': '2024020203061803900_r20', 'first-page': '2691', 'volume': '6', 'year': '1965', 'journal-title': 'Sov. Phys. Solid State'} / Sov. Phys. Solid State (1965)
10.1063/1.1653153 / Appl. Phys. Letters (1970)

Dates

Type	When
Created	21 years, 6 months ago (Feb. 9, 2004, 1:09 p.m.)
Deposited	1 year, 7 months ago (Feb. 1, 2024, 10:06 p.m.)
Indexed	1 year, 7 months ago (Feb. 2, 2024, 12:25 a.m.)
Issued	54 years, 4 months ago (May 1, 1971)
Published	54 years, 4 months ago (May 1, 1971)
Published Print	54 years, 4 months ago (May 1, 1971)

Funders 0

None

BibTeX

@article{Weber_1971, title={Small-Signal Transient Double Injection in Semiconductors Heavily Doped with Deep Traps}, volume={42}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1660569}, DOI={10.1063/1.1660569}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Weber, Willes H. and Elliott, R. S. and Cederquist, A. L.}, year={1971}, month=may, pages={2497–2501} }

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