Abstract
When electron currents flow in thermal SiO2 films which have been exposed to water, a buildup of negative charge occurs in the oxide. This paper describes a series of experiments designed to characterize this charging effect. It is found that if water is diffused into a SiO2 film, water related centers are formed which act like electron traps with capture cross section of approximately 1.5 × 10−17 cm2. Experiments are described which show that when one of these centers captures an electron, atomic hydrogen is released which diffuses away and escapes or reacts and a stable negative charge is left behind. Electrochemical charging effects of this type have not previously been considered, although they may play a very important role in some semiconductor device failure effects.
References
29
Referenced
370
10.1063/1.1652955
/ Appl. Phys. Letters (1969){'key': '2024020203383969500_r2', 'first-page': '871', 'volume': 'ED-17', 'year': '1970', 'journal-title': 'IEEE Trans. Electron. Devices'}
/ IEEE Trans. Electron. Devices (1970)10.1063/1.1652996
/ Appl. Phys. Letters (1969){'key': '2024020203383969500_r4'}
10.1063/1.1659364
/ J. Appl. Phys. (1970)10.1149/1.2423887
/ J. Electrochem. Soc. (1966)10.1002/j.1538-7305.1967.tb01727.x
/ Bell System Tech. J. (1967){'key': '2024020203383969500_r8'}
10.1063/1.1709189
/ J. Appl. Phys. (1967)10.1016/0038-1101(68)90087-7
/ Solid-State Electron. (1968){'key': '2024020203383969500_r11', 'first-page': '208', 'volume': '28', 'year': '1967', 'journal-title': 'RCA Rev.'}
/ RCA Rev. (1967)10.1109/PROC.1967.5776
/ Proc. IEEE (1967)10.1149/1.2407603
/ J. Electrochem. Soc. (1970)10.1149/1.2408122
/ J. Electrochem. Soc. (1971)10.1149/1.2426537
/ J. Electrochem. Soc. (1967)10.1016/0039-6028(69)90247-7
/ Surface Sci. (1969)10.1103/PhysRev.87.835
/ Phys. Rev. (1952)10.1149/1.2426565
/ J. Electrochem. Soc. (1967)10.1063/1.1703105
/ J. Appl. Phys. (1965)10.1063/1.1699825
/ J. Appl. Phys. (1951){'key': '2024020203383969500_r21', 'first-page': '22', 'volume': '29', 'year': '1968', 'journal-title': 'RCA Rev.'}
/ RCA Rev. (1968)10.1021/j100811a040
/ J. Phys. Chem. (1962)10.1016/0013-4686(68)80060-X
/ Electrochim. Acta (1968)10.1063/1.1660066
/ J. Appl. Phys. (1971){'key': '2024020203383969500_r25', 'first-page': '41', 'volume': 'NS-17', 'year': '1970', 'journal-title': 'IEEE Trans. Nucl. Sci.'}
/ IEEE Trans. Nucl. Sci. (1970)10.1002/j.1538-7305.1967.tb01738.x
/ Bell System Tech. J. (1967)10.1109/PROC.1970.7897
/ Proc. IEEE (1970)10.1016/0038-1101(67)90169-4
/ Solid-State Electron. (1967)10.1103/PhysRev.140.A569
/ Phys. Rev. (1965)
Dates
Type | When |
---|---|
Created | 21 years, 6 months ago (Feb. 9, 2004, 1:09 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 1, 2024, 10:39 p.m.) |
Indexed | 2 weeks, 3 days ago (Aug. 7, 2025, 4:47 p.m.) |
Issued | 53 years, 8 months ago (Dec. 1, 1971) |
Published | 53 years, 8 months ago (Dec. 1, 1971) |
Published Print | 53 years, 8 months ago (Dec. 1, 1971) |
@article{Nicollian_1971, title={Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents}, volume={42}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1659996}, DOI={10.1063/1.1659996}, number={13}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Nicollian, E. H. and Berglund, C. N. and Schmidt, P. F. and Andrews, J. M.}, year={1971}, month=dec, pages={5654–5664} }