DOI: 10.1063/1.1659990. Capacitance-Voltage Characteristics of Metal Barriers on <i>p</i> PbTe and <i>p</i> InAs: Effects of the Inversion Layer

Capacitance-Voltage Characteristics of Metal Barriers on p PbTe and p InAs: Effects of the Inversion Layer

10.1063/1.1659990

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The dependence of the capacitance C on the voltage is derived for metal-semiconductor barriers in which there is a strong inversion layer at the metal-semiconductor interface, a case of interest in the study of surface effects and in applications for laser structures. Experimental results for evaporated lead and tin barriers on p PbTe at 77 °K and for evaporated gold barriers on p InAs at 77 and 4.2 °K are presented and compared to calculations performed with the inversion layer model. Both the theory and experiment show an essentially linear dependence of C−2 with voltage, as in the usual Schottky barrier, but a voltage intercept which is surprisingly dependent on band-structure parameters, bulk carrier concentration, and temperature. Reasonable quantitative agreement between the theory and experiment is obtained. In all cases the presence of a strong inversion layer can be clearly established. The analysis of the capacitance-voltage data, however, gives only a lower limit to the amount of inversion present.

Bibliography

Walpole, J. N., & Nill, K. W. (1971). Capacitance-Voltage Characteristics of Metal Barriers on p PbTe and p InAs: Effects of the Inversion Layer. Journal of Applied Physics, 42(13), 5609â5617.

Authors 2

J. N. Walpole (first)
K. W. Nill (additional)

References 26 Referenced 58

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Dates

Type	When
Created	21 years, 6 months ago (Feb. 9, 2004, 1:09 p.m.)
Deposited	1 year, 6 months ago (Feb. 1, 2024, 10:38 p.m.)
Indexed	4 months, 1 week ago (April 12, 2025, 3:25 a.m.)
Issued	53 years, 8 months ago (Dec. 1, 1971)
Published	53 years, 8 months ago (Dec. 1, 1971)
Published Print	53 years, 8 months ago (Dec. 1, 1971)

Funders 0

None

BibTeX

@article{Walpole_1971, title={Capacitance-Voltage Characteristics of Metal Barriers on p PbTe and p InAs: Effects of the Inversion Layer}, volume={42}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1659990}, DOI={10.1063/1.1659990}, number={13}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Walpole, J. N. and Nill, K. W.}, year={1971}, month=dec, pages={5609–5617} }

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