DOI: 10.1063/1.1659984. Hole-Electron Production in Semiconductors

Hole-Electron Production in Semiconductors

10.1063/1.1659984

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

A phenomenological model for the average expended energy ε to produce an electron-hole pair is derived for silicon and germanium. The values agree well with experimental data at room temperature and at 77 °K. By using this model to calculate the Fano factor F, it has been found that F ≅ 0.05 for both silicon and germanium. It is concluded that under perfect charge-collection conditions, germanium-radiation detectors will show better energy resolution than silicon detectors because of the lower ε in germanium.

Bibliography

Zulliger, H. R. (1971). Hole-Electron Production in Semiconductors. Journal of Applied Physics, 42(13), 5570â5577.

Authors 1

H. R. Zulliger (first)

References 23 Referenced 15

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Dates

Type	When
Created	21 years, 6 months ago (Feb. 9, 2004, 1:09 p.m.)
Deposited	1 year, 6 months ago (Feb. 1, 2024, 10:37 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 7:24 a.m.)
Issued	53 years, 8 months ago (Dec. 1, 1971)
Published	53 years, 8 months ago (Dec. 1, 1971)
Published Print	53 years, 8 months ago (Dec. 1, 1971)

Funders 0

None

BibTeX

@article{Zulliger_1971, title={Hole-Electron Production in Semiconductors}, volume={42}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1659984}, DOI={10.1063/1.1659984}, number={13}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zulliger, H. R.}, year={1971}, month=dec, pages={5570–5577} }

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