DOI: 10.1063/1.1659778. Statistical Metallurgical Model for Electromigration Failure in Aluminum Thin-Film Conductors

Statistical Metallurgical Model for Electromigration Failure in Aluminum Thin-Film Conductors

10.1063/1.1659778

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

A statistical metallurgical model of the random structural defects which cause electromigration failure in aluminum thin-film conductors is presented. The model relates time-to-failure to the various divergences which may be present in the conductor. Structural divergences due to differences in grain size, grain-boundary mobility, and grain-boundary orientation with respect to the electric field vector E lim →, are considered. The statistical distributions of divergences due to these attributes are empirically determined. A computer is then used to simulate both the structure of a thin-film conductor and its time-to-failure. The simulation model is used to predict the dependence of conductor reliability on such microscopic design features as grain size distribution, conductor length, and conductor width. The curves produced by computer simulation are then compared with those derived from experimental data.

Bibliography

Attardo, M. J., Rutledge, R., & Jack, R. C. (1971). Statistical Metallurgical Model for Electromigration Failure in Aluminum Thin-Film Conductors. Journal of Applied Physics, 42(11), 4343â4349.

Authors 3

M. J. Attardo (first)
R. Rutledge (additional)
R. C. Jack (additional)

References 10 Referenced 111

10.1063/1.1658395 / J. Appl. Phys. (1970)
10.1063/1.1657425 / J. Appl. Phys. (1969)
10.1063/1.1659233 / J. Appl. Phys. (1970)
10.1063/1.1754940 / J. Appl. Phys. Letters (1967)
{'key': '2024020203260948600_r5', 'first-page': '201', 'volume': '12', 'year': '1968', 'journal-title': 'Phys. Letters'} / Phys. Letters (1968)
10.1016/0001-6160(54)90061-9 / Acta Met. (1954)
{'key': '2024020203260948600_r7', 'first-page': '3', 'volume': '32', 'year': '1961', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1961)
{'key': '2024020203260948600_r8'}
10.4153/CJM-1958-010-0 / Can. J. Math. (1958)
10.1016/0001-6160(57)90136-0 / Acta Met. (1957)

Dates

Type	When
Created	21 years, 6 months ago (Feb. 9, 2004, 1:09 p.m.)
Deposited	1 year, 6 months ago (Feb. 1, 2024, 10:26 p.m.)
Indexed	4 months, 3 weeks ago (March 30, 2025, 12:04 p.m.)
Issued	53 years, 10 months ago (Oct. 1, 1971)
Published	53 years, 10 months ago (Oct. 1, 1971)
Published Print	53 years, 10 months ago (Oct. 1, 1971)

Funders 0

None

BibTeX

@article{Attardo_1971, title={Statistical Metallurgical Model for Electromigration Failure in Aluminum Thin-Film Conductors}, volume={42}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1659778}, DOI={10.1063/1.1659778}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Attardo, M. J. and Rutledge, R. and Jack, R. C.}, year={1971}, month=oct, pages={4343–4349} }

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