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Journal of Applied Physics (317)
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EerNisse, E. P. (1971). Sputtering and Strain of Silicon by Ion Implantation. Journal of Applied Physics, 42(1), 480–482.

Authors 1
  1. E. P. EerNisse (first)
References 12 Referenced 48
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  4. 10.1002/pssb.19690330134 / Phys. Status Solidi (1969)
  5. 10.1063/1.1653443 / Appl. Phys. Lett. (1970)
  6. {'key': '2024020202481847600_r6'}
  7. {'key': '2024020202481847600_r7'}
  8. {'key': '2024020202481847600_r8'}
  9. {'key': '2024020202481847600_r9'}
  10. {'key': '2024020202481847600_r10'}
  11. 10.1139/p68-060 / Can. J. Phys. (1968)
  12. 10.1063/1.1735896 / J. Appl. Phys. (1960)
Dates
Type When
Created 21 years, 6 months ago (Feb. 9, 2004, 1:09 p.m.)
Deposited 1 year, 6 months ago (Feb. 1, 2024, 9:48 p.m.)
Indexed 1 year, 6 months ago (Feb. 5, 2024, 2:57 a.m.)
Issued 54 years, 7 months ago (Jan. 1, 1971)
Published 54 years, 7 months ago (Jan. 1, 1971)
Published Print 54 years, 7 months ago (Jan. 1, 1971)
Funders 0

None

@article{EerNisse_1971, title={Sputtering and Strain of Silicon by Ion Implantation}, volume={42}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1659630}, DOI={10.1063/1.1659630}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={EerNisse, E. P.}, year={1971}, month=jan, pages={480–482} }