DOI: 10.1063/1.1659185. Photoemission of Holes and Electrons from Aluminum into Aluminum Oxide

Photoemission of Holes and Electrons from Aluminum into Aluminum Oxide

10.1063/1.1659185

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The photoemission of both electrons and holes from aluminum into thin layers of ``plasma-grown'' aluminum oxide has been observed. The threshold energies for these processes are found to be 2.0±0.2 eV for electrons and 3.1±0.2 eV for holes. An approximate energy band diagram of the Al–Al2O3 interface based on these values is presented.

Bibliography

Goodman, A. M. (1970). Photoemission of Holes and Electrons from Aluminum into Aluminum Oxide. Journal of Applied Physics, 41(5), 2176â2179.

Authors 1

Alvin M. Goodman (first)

References 21 Referenced 96

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Dates

Type	When
Created	21 years, 6 months ago (Feb. 9, 2004, 11:56 a.m.)
Deposited	1 year, 7 months ago (Feb. 1, 2024, 9:12 p.m.)
Indexed	1 year, 6 months ago (March 1, 2024, 4:24 p.m.)
Issued	55 years, 5 months ago (April 1, 1970)
Published	55 years, 5 months ago (April 1, 1970)
Published Print	55 years, 5 months ago (April 1, 1970)

Funders 0

None

BibTeX

@article{Goodman_1970, title={Photoemission of Holes and Electrons from Aluminum into Aluminum Oxide}, volume={41}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1659185}, DOI={10.1063/1.1659185}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Goodman, Alvin M.}, year={1970}, month=apr, pages={2176–2179} }

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