DOI: 10.1063/1.1658281. Gamma Response of Semi-insulating Material in the Presence of Trapping and Detrapping

Gamma Response of Semi-insulating Material in the Presence of Trapping and Detrapping

10.1063/1.1658281

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The photoelectric and Compton response to γ rays for a detector made from semi-insulating material (i.e., a monocrystalline semiconductor containing trapping centers) was calculated for the case of charge transport by one type of carrier (electron or hole), and also for the case of two-carrier transport (electron and hole) with each carrier having the same mean free path. Approximate expressions were then derived for the observable γ-ray efficiency of the detector as a function of material parameters for CdTe crystals used in the fabrication of surface barrier detectors; this efficiency is dependent upon temperature and electric field intensity for specified values of the carrier mobility-trapping time product and the threshold used in the recording of spectra. Spectra and values for efficiency were determined at room temperature for γ rays at energy values from 0.393 to 1.33 MeV, and also as a function of temperature over the range 24° to 68°C for γ rays from a 60Co source. The observations show behavior corresponding to a trap-limited response, and the presence of charge detrapping.

Authors 2

W. Akutagawa (first)
K. Zanio (additional)

References 20 Referenced 74

10.1016/0038-1101(61)90054-5 / Solid-State Electron. (1961)
10.1063/1.1656484 / J. Appl. Phys. (1968)
10.1063/1.1656679 / J. Appl. Phys. (1968)
10.1007/BF01338917 / Z. Phys. (1932)
10.1109/TNS.1968.4324947 / IEEE Trans. Nucl. Sci. (1968)
{'key': '2024020201314799500_r6', 'first-page': '487', 'volume': '14', 'year': '1967', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1967)
10.1103/RevModPhys.24.79 / Rev. Mod. Phys. (1952)
{'key': '2024020201314799500_r8'}
10.1063/1.1651987 / Appl. Phys. Lett. (1968)
10.1109/TNS.1968.4324883 / IEEE Trans. Nucl. Sci. (1968)
10.1088/0370-1328/81/1/319 / Proc. Phys. Soc. (London) (1963)
10.1063/1.1754751 / Appl. Phys. Lett. (1966)
10.1103/PhysRev.111.462 / Phys. Rev. (1958)
{'key': '2024020201314799500_r13'}
{'key': '2024020201314799500_r14', 'first-page': '669', 'volume': '1', 'year': '1967', 'journal-title': 'Sov. Phys.-Semicond.'} / Sov. Phys.-Semicond. (1967)
{'key': '2024020201314799500_r14a', 'first-page': '258', 'volume': '15', 'year': '1968', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1968)
{'key': '2024020201314799500_r15'}
{'key': '2024020201314799500_r15a'}
10.1016/0031-9163(65)90254-4 / Phys. Lett. (1965)
{'key': '2024020201314799500_r17', 'first-page': '296', 'volume': '35', 'year': '1967', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1967)

Dates

Type	When
Created	21 years, 6 months ago (Feb. 9, 2004, 11:56 a.m.)
Deposited	1 year, 6 months ago (Feb. 1, 2024, 8:32 p.m.)
Indexed	4 months ago (April 20, 2025, 12:43 a.m.)
Issued	56 years ago (Aug. 1, 1969)
Published	56 years ago (Aug. 1, 1969)
Published Print	56 years ago (Aug. 1, 1969)

Funders 0

None

BibTeX

@article{Akutagawa_1969, title={Gamma Response of Semi-insulating Material in the Presence of Trapping and Detrapping}, volume={40}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1658281}, DOI={10.1063/1.1658281}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Akutagawa, W. and Zanio, K.}, year={1969}, month=aug, pages={3838–3854} }

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