DOI: 10.1063/1.1658181. Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) Structures

Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) Structures

10.1063/1.1658181

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

A simple physical model that predicts charge accumulation at the dielectric interface of metal-nitride-oxide-silicon (MNOS) structures is proposed and verified experimentally. The model is based on the presence of steady-state current flow in the dielectric structure. Interface-charge accumulation is shown to be determined by the requirement for continuity of current through the structure under steady-state conditions. Continuity of current is established by accumulation of either positive or negative charge for a given polarity of charging voltage, depending on the relative current-field characteristics of the silicon nitride and silicon dioxide layers. Due to the exponential nature of the current-field characteristics, the time required to reach steady state is a strong function of the applied charging voltage. This leads to the observed charge storage property of MNOS devices. The hysteresis characteristic observed in MNOS structures is shown to be time-dependent with a tendency to merge into a single-valued dependence of accumulated charge on charging voltage as the steady-state condition is approached. The validity of the theoretical model for both steady-state and transient behavior is confirmed by current-voltage, capacitance-voltage, and turn-on measurements of MNOS capacitors and transistors for different dielectric thickness ratios and over a wide temperature range. The underlying concept that charge accumulation establishes current continuity in a two-layer dielectric structure should be valid, in general, for any two-dielectric structure.

Bibliography

Frohman-Bentchkowsky, D., & Lenzlinger, M. (1969). Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) Structures. Journal of Applied Physics, 40(8), 3307â3319.

Authors 2

D. Frohman-Bentchkowsky (first)
M. Lenzlinger (additional)

References 13 Referenced 166

10.1063/1.1651983 / Appl. Phys. Lett. (1968)
{'key': '2024020201271914200_r2'}
10.1063/1.1657043 / J. Appl. Phys. (1969)
10.1063/1.1710030 / J. Appl. Phys. (1967)
10.1016/0038-1101(67)90059-7 / Solid-State Electron. (1967)
10.1080/00018736100101271 / Advan. Phys. (1961)
10.1016/0038-1101(65)90046-8 / Solid-State Electron. (1965)
{'key': '2024020201271914200_r8'}
{'key': '2024020201271914200_r9'}
10.1063/1.1754868 / Appl. Phys. Lett. (1967)
10.1016/0038-1101(67)90003-2 / Solid-State Electron. (1967)
10.1149/1.2411146 / J. Electrochem. Soc. (1968)
10.1149/1.2411484 / J. Electrochem. Soc. (1968)

Dates

Type	When
Created	21 years, 6 months ago (Feb. 9, 2004, 11:56 a.m.)
Deposited	1 year, 6 months ago (Feb. 1, 2024, 8:27 p.m.)
Indexed	1 day, 10 hours ago (Aug. 23, 2025, 9:32 p.m.)
Issued	56 years, 1 month ago (July 1, 1969)
Published	56 years, 1 month ago (July 1, 1969)
Published Print	56 years, 1 month ago (July 1, 1969)

Funders 0

None

BibTeX

@article{Frohman_Bentchkowsky_1969, title={Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) Structures}, volume={40}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1658181}, DOI={10.1063/1.1658181}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Frohman-Bentchkowsky, D. and Lenzlinger, M.}, year={1969}, month=jul, pages={3307–3319} }

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