DOI: 10.1063/1.1657346. Structure and Properties of Sputtered Ta

Structure and Properties of Sputtered Ta–Al2O3 Cermet Thin Films

10.1063/1.1657346

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Ta–Al2O3 cermet thin films were produced by diode sputtering. Cathodes were fabricated by powder techniques, plasma spraying and as mechanical composites. Film compositions of 1–20 wt% Al2O3 produced resistivities of 250 to 25 000 μΩ·cm and TCR's of +100 to −450 ppm/°C, respectively. The films showed good thermal stability and could be anodized. Electron microscopy and x-ray analyses suggest a film structure consisting of long columnar grains of bcc Ta, approximately 100 Å in diameter, surrounded by Al2O3. A quantitative analysis is made of tunneling currents in an idealized film. Resistivity-composition and resistivity-temperature data are explained in terms of this analysis. The height of the Al2O3 barrier between grains is estimated to be 0.23 eV for an effective electron mass of 1/9. Barrier thicknesses are estimated at 15–30 Å.

Bibliography

Henrickson, J. F., Krauss, G., Tauber, R. N., & Sharp, D. J. (1969). Structure and Properties of Sputtered TaâAl2O3 Cermet Thin Films. Journal of Applied Physics, 40(13), 5006â5014.

Authors 4

J. F. Henrickson (first)
G. Krauss (additional)
R. N. Tauber (additional)
D. J. Sharp (additional)

References 14 Referenced 22

10.1109/PROC.1966.5183 / Proc. IEEE (1966)
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{'key': '2024020201431991900_r4', 'first-page': '28', 'volume': '10', 'year': '1967', 'journal-title': 'Semicond. Prod.'} / Semicond. Prod. (1967)
{'key': '2024020201431991900_r5', 'first-page': '44', 'volume': '18', 'year': '1967', 'journal-title': 'Res. Develop. Ind.'} / Res. Develop. Ind. (1967)
10.1366/000370267774385605 / Appl. Spectrosc. (1967)
{'key': '2024020201431991900_r7'}
10.1063/1.1728531 / J. Appl. Phys. (1962)
{'issue': '6', 'key': '2024020201431991900_r9', 'first-page': '489', 'volume': 'IX', 'year': '1945', 'journal-title': 'J. Phys. (USSR)'} / J. Phys. (USSR) (1945)
10.1016/0022-3697(62)90165-8 / J. Phys. Chem. Solids (1962)
10.1063/1.1713820 / J. Appl. Phys. (1964)
10.1063/1.1735973 / J. Appl. Phys. (1961)
10.1063/1.1702682 / J. Appl. Phys. (1963)
{'key': '2024020201431991900_r14'}

Dates

Type	When
Created	21 years, 6 months ago (Feb. 9, 2004, 11:56 a.m.)
Deposited	1 year, 6 months ago (Feb. 1, 2024, 8:43 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 10:07 a.m.)
Issued	55 years, 8 months ago (Dec. 1, 1969)
Published	55 years, 8 months ago (Dec. 1, 1969)
Published Print	55 years, 8 months ago (Dec. 1, 1969)

Funders 0

None

BibTeX

@article{Henrickson_1969, title={Structure and Properties of Sputtered Ta–Al2O3 Cermet Thin Films}, volume={40}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1657346}, DOI={10.1063/1.1657346}, number={13}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Henrickson, J. F. and Krauss, G. and Tauber, R. N. and Sharp, D. J.}, year={1969}, month=dec, pages={5006–5014} }

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