DOI: 10.1063/1.1656954. Intrinsic Resistivity and Electron Mean Free Path in Aluminum Films

Intrinsic Resistivity and Electron Mean Free Path in Aluminum Films

10.1063/1.1656954

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Measurements of the electrical resistivity at 296° and 4.2°K in aluminum films, evaporated both in an ion-pumped ultrahigh-vacuum system and in conventional oil-pumped systems onto unheated glass substrates, are presented and used to calculate the intrinsic mean free path and intrinsic electrical resistivity at 4.2°K. It is shown that the UHV films are characterized by a maximum mean free path of the order of 1 μ and by smaller residual resistances than other films. While the mean free path so obtained is still several orders of magnitude smaller than the published value for high-purity foils of bulk aluminum, it is nevertheless not small enough to appreciably influence the resistivity at 296°K which is measured to be ≈60% higher than the bulk value. This discrepancy, which may be due to structural effects, emphasizes the view that the sample artifact of adding the bulk thermal resistivity to a residual resistivity can be misleading in the case of thin films, even when surface scattering is accounted for.

Bibliography

Mayadas, A. F. (1968). Intrinsic Resistivity and Electron Mean Free Path in Aluminum Films. Journal of Applied Physics, 39(9), 4241â4245.

Authors 1

A. F. Mayadas (first)

References 14 Referenced 72

10.1017/S0305004100019952 / Proc. Cambridge Phil. Soc. (1938)
10.1080/00018735200101151 / Advan. Phys. (1952)
{'key': '2024020200300352400_r3', 'first-page': '423', 'volume': '22', 'year': '1967', 'journal-title': 'IBM Tech. Rept. TR'} / IBM Tech. Rept. TR (1967)
{'key': '2024020200300352400_r3a'}
10.1063/1.1754095 / Appl. Phys. Letters (1964)
10.1088/0370-1328/90/4/127 / Proc. Phys. Soc. (London) (1967)
{'key': '2024020200300352400_r6', 'first-page': '1955', 'volume': '155', 'year': '1967', 'journal-title': 'Phys. Rev.'} / Phys. Rev. (1967)
10.1147/sj.32.0198 / IBM Systems J. (1964)
10.1103/PhysRev.138.A1145 / Phys. Rev. (1965)
10.1080/14786436708227694 / Phil. Mag (1967)
{'key': '2024020200300352400_r10'}
{'key': '2024020200300352400_r11'}
{'key': '2024020200300352400_r12'}
{'key': '2024020200300352400_r13'}

Dates

Type	When
Created	21 years, 6 months ago (Feb. 9, 2004, 11:55 a.m.)
Deposited	1 year, 6 months ago (Feb. 1, 2024, 7:45 p.m.)
Indexed	3 weeks, 1 day ago (Aug. 6, 2025, 8:28 a.m.)
Issued	57 years ago (Aug. 1, 1968)
Published	57 years ago (Aug. 1, 1968)
Published Print	57 years ago (Aug. 1, 1968)

Funders 0

None

BibTeX

@article{Mayadas_1968, title={Intrinsic Resistivity and Electron Mean Free Path in Aluminum Films}, volume={39}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1656954}, DOI={10.1063/1.1656954}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Mayadas, A. F.}, year={1968}, month=aug, pages={4241–4245} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        6
      ]
    ],
    "date-time": "2025-08-06T12:28:27Z",
    "timestamp": 1754483307165
  },
  "reference-count": 14,
  "publisher": "AIP Publishing",
  "issue": "9",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1968,
        8,
        1
      ]
    ]
  },
  "abstract": "<jats:p>Measurements of the electrical resistivity at 296\u00b0 and 4.2\u00b0K in aluminum films, evaporated both in an ion-pumped ultrahigh-vacuum system and in conventional oil-pumped systems onto unheated glass substrates, are presented and used to calculate the intrinsic mean free path and intrinsic electrical resistivity at 4.2\u00b0K. It is shown that the UHV films are characterized by a maximum mean free path of the order of 1 \u03bc and by smaller residual resistances than other films. While the mean free path so obtained is still several orders of magnitude smaller than the published value for high-purity foils of bulk aluminum, it is nevertheless not small enough to appreciably influence the resistivity at 296\u00b0K which is measured to be \u224860% higher than the bulk value. This discrepancy, which may be due to structural effects, emphasizes the view that the sample artifact of adding the bulk thermal resistivity to a residual resistivity can be misleading in the case of thin films, even when surface scattering is accounted for.</jats:p>",
  "DOI": "10.1063/1.1656954",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2004,
        2,
        9
      ]
    ],
    "date-time": "2004-02-09T16:55:46Z",
    "timestamp": 1076345746000
  },
  "page": "4241-4245",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 72,
  "title": "Intrinsic Resistivity and Electron Mean Free Path in Aluminum Films",
  "prefix": "10.1063",
  "volume": "39",
  "author": [
    {
      "given": "A. F.",
      "family": "Mayadas",
      "sequence": "first",
      "affiliation": [
        {
          "name": "IBM Watson Research Center, Yorktown Heights, New York 10598"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020200300352400_r1",
      "doi-asserted-by": "crossref",
      "first-page": "100",
      "DOI": "10.1017/S0305004100019952",
      "volume": "34",
      "year": "1938",
      "journal-title": "Proc. Cambridge Phil. Soc."
    },
    {
      "key": "2024020200300352400_r2",
      "doi-asserted-by": "crossref",
      "first-page": "1",
      "DOI": "10.1080/00018735200101151",
      "volume": "1",
      "year": "1952",
      "journal-title": "Advan. Phys."
    },
    {
      "key": "2024020200300352400_r3",
      "first-page": "423",
      "volume": "22",
      "year": "1967",
      "journal-title": "IBM Tech. Rept. TR"
    },
    {
      "key": "2024020200300352400_r3a"
    },
    {
      "key": "2024020200300352400_r4",
      "doi-asserted-by": "crossref",
      "first-page": "155",
      "DOI": "10.1063/1.1754095",
      "volume": "5",
      "year": "1964",
      "journal-title": "Appl. Phys. Letters"
    },
    {
      "key": "2024020200300352400_r5",
      "doi-asserted-by": "crossref",
      "first-page": "1175",
      "DOI": "10.1088/0370-1328/90/4/127",
      "volume": "90",
      "year": "1967",
      "journal-title": "Proc. Phys. Soc. (London)"
    },
    {
      "key": "2024020200300352400_r6",
      "first-page": "1955",
      "volume": "155",
      "year": "1967",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020200300352400_r7",
      "doi-asserted-by": "crossref",
      "first-page": "198",
      "DOI": "10.1147/sj.32.0198",
      "volume": "3",
      "year": "1964",
      "journal-title": "IBM Systems J."
    },
    {
      "key": "2024020200300352400_r8",
      "doi-asserted-by": "crossref",
      "first-page": "A1145",
      "DOI": "10.1103/PhysRev.138.A1145",
      "volume": "138",
      "year": "1965",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020200300352400_r9",
      "doi-asserted-by": "crossref",
      "first-page": "217",
      "DOI": "10.1080/14786436708227694",
      "volume": "15",
      "year": "1967",
      "journal-title": "Phil. Mag"
    },
    {
      "key": "2024020200300352400_r10"
    },
    {
      "key": "2024020200300352400_r11"
    },
    {
      "key": "2024020200300352400_r12"
    },
    {
      "key": "2024020200300352400_r13"
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/39/9/4241/18347217/4241_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/39/9/4241/18347217/4241_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        2
      ]
    ],
    "date-time": "2024-02-02T00:45:57Z",
    "timestamp": 1706834757000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/39/9/4241/507706/Intrinsic-Resistivity-and-Electron-Mean-Free-Path"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1968,
        8,
        1
      ]
    ]
  },
  "references-count": 14,
  "journal-issue": {
    "issue": "9",
    "published-print": {
      "date-parts": [
        [
          1968,
          8,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1656954",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1968,
        8
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1968,
        8,
        1
      ]
    ]
  }
}