DOI: 10.1063/1.1655476. GaAs–Al<i>x</i> Ga1−<i>x</i> As double-heterostructure lasers prepared by molecular-beam epitaxy

GaAs–Alx Ga1−x As double-heterostructure lasers prepared by molecular-beam epitaxy

10.1063/1.1655476

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

GaAs–Alx Ga1−x As double-heterostructure (DH) lasers that exhibit laser properties similar to DH lasers prepared by liquid-phase epitaxy have been prepared by molecular-beam epitaxy. For a structure with a 0.53-μ-thick active layer, the as-grown threshold current density at room temperature was 3.5×104 A/cm2, but by annealing the threshold was reduced to 4.0×103 A/cm2.

Bibliography

Cho, A. Y., & Casey, H. C. (1974). GaAsâAlx Ga1âx As double-heterostructure lasers prepared by molecular-beam epitaxy. Applied Physics Letters, 25(5), 288â290.

Authors 2

A. Y. Cho (first)
H. C. Casey (additional)

References 6 Referenced 86

10.1063/1.1654409 / Appl. Phys. Lett. (1972)
10.1063/1.1654488 / Appl. Phys. Lett. (1973)
10.1063/1.1663399 / J. Appl. Phys. (1974)
10.1063/1.1663495 / J. Appl. Phys. (1974)
10.1063/1.1661082 / J. Appl. Phys. (1972)
10.1364/AO.5.001514 / Appl. Opt. (1966)

Dates

Type	When
Created	21 years, 7 months ago (Jan. 30, 2004, 3:50 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 3:48 a.m.)
Indexed	2 months, 1 week ago (June 24, 2025, 6:48 a.m.)
Issued	51 years ago (Sept. 1, 1974)
Published	51 years ago (Sept. 1, 1974)
Published Print	51 years ago (Sept. 1, 1974)

Funders 0

None

BibTeX

@article{Cho_1974, title={GaAs–Alx Ga1−x As double-heterostructure lasers prepared by molecular-beam epitaxy}, volume={25}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1655476}, DOI={10.1063/1.1655476}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Cho, A. Y. and Casey, H. C.}, year={1974}, month=sep, pages={288–290} }

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