DOI: 10.1063/1.1655265. Solid-phase transport and epitaxial growth of Ge and Si

Solid-phase transport and epitaxial growth of Ge and Si

10.1063/1.1655265

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Epitaxial growth of a semiconductor film from solid solution by dissolution and transport of an evaporated semiconductor layer through a metal film has been demonstrated. A Ge growth layer of 4800 Å has been obtained by heating the system bulk-Ge/Al/evaporated-Ge at 300 °C. Electrical measurements indicate that the layers are heavily doped p type. A silicon growth of 2000 Å has been obtained by heating the system bulk-Si/Pd/evaporated-Si at 600 °C. Channeling measurements show that the Ge and Si layers are well ordered and epitaxial with the underlying substrate.

Bibliography

Canali, C., Mayer, J. W., Ottaviani, G., Sigurd, D., & van der Weg, W. (1974). Solid-phase transport and epitaxial growth of Ge and Si. Applied Physics Letters, 25(1), 3â5.

Authors 5

C. Canali (first)
J. W. Mayer (additional)
G. Ottaviani (additional)
D. Sigurd (additional)
W. van der Weg (additional)

References 15 Referenced 36

10.1063/1.1661782 / J. Appl. Phys. (1972)
10.1063/1.1653799 / Appl. Phys. Lett. (1971)
10.1007/BF02643082 / Metall. Trans. (1973)
10.1002/pssa.2210130223 / Phys. Status Solidi A (1972)
10.1063/1.1654558 / Appl. Phys. Lett. (1973)
10.1126/science.180.4089.948 / Science (1973)
10.1016/0022-3093(73)90061-6 / J. Non-Cryst. Solids (1973)
10.1063/1.1663483 / J. Appl. Phys. (1974)
10.1063/1.1663484 / J. Appl. Phys. (1974)
10.1143/JJAP.8.1056 / Jap. J. Appl. Phys. (1969)
10.1016/0040-6090(70)90036-2 / Thin Solid Films (1970)
10.1016/0022-3093(72)90267-0 / J. Non-Cryst. Solids (1972)
{'key': '2024020508423362000_r13', 'first-page': '304', 'volume': '16', 'year': '1971', 'journal-title': 'Bull. Am. Phys. Soc.'} / Bull. Am. Phys. Soc. (1971)
10.1126/science.177.4052.841 / Science (1972)
10.1016/0038-1101(70)90183-8 / Solid-State Electron (1970)

Dates

Type	When
Created	21 years, 7 months ago (Jan. 30, 2004, 3:50 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 3:42 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 7:22 a.m.)
Issued	51 years, 2 months ago (July 1, 1974)
Published	51 years, 2 months ago (July 1, 1974)
Published Print	51 years, 2 months ago (July 1, 1974)

Funders 0

None

BibTeX

@article{Canali_1974, title={Solid-phase transport and epitaxial growth of Ge and Si}, volume={25}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1655265}, DOI={10.1063/1.1655265}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Canali, C. and Mayer, J. W. and Ottaviani, G. and Sigurd, D. and van der Weg, W.}, year={1974}, month=jul, pages={3–5} }

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