DOI: 10.1063/1.1655204. Amorphous semiconductor devices displaying memory in one polarity and threshold switching in the opposite polarity

Amorphous semiconductor devices displaying memory in one polarity and threshold switching in the opposite polarity

10.1063/1.1655204

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A novel switching effect has been found in amorphous semiconductor devices having an aluminum interlayer on one electrode. These devices operate as memory devices in one polarity and as threshold switching devices in the opposite polarity. The setting time is very short if the aluminum side of the device is positive. If no aluminum interlayer is present, a long pulse with special trailing edge is necessary to accomplish memory setting. Threshold switching voltage and memory breakdown voltage of the device with an interlayer have the same value.

Bibliography

Nicolaides, R. V. (1974). Amorphous semiconductor devices displaying memory in one polarity and threshold switching in the opposite polarity. Applied Physics Letters, 24(7), 331â333.

Authors 1

R. Vogel Nicolaides (first)

References 8 Referenced 1

10.1016/0022-3093(70)90130-4 / J. Non-Cryst. Solids (1970)
10.1016/0022-3093(70)90131-6 / J. Non-Cryst. Solids (1970)
{'key': '2024020508362113800_r3', 'first-page': '105', 'volume': '7', 'year': '1966', 'journal-title': 'Phys. Chem. Glasses'} / Phys. Chem. Glasses (1966)
10.1016/0022-3093(70)90115-8 / J. Non-Cryst. Solids (1970)
{'key': '2024020508362113800_r5'}
{'key': '2024020508362113800_r6'}
{'key': '2024020508362113800_r7', 'first-page': '877', 'volume': '8–10', 'year': '1972', 'journal-title': 'J. Non-Cryst. Solids'} / J. Non-Cryst. Solids (1972)
{'key': '2024020508362113800_r8', 'first-page': '469', 'volume': '4', 'year': '1970', 'journal-title': 'J. Non-Cryst. Solids'} / J. Non-Cryst. Solids (1970)

Dates

Type	When
Created	21 years, 6 months ago (Jan. 30, 2004, 3:47 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 3:36 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 4:10 a.m.)
Issued	51 years, 4 months ago (April 1, 1974)
Published	51 years, 4 months ago (April 1, 1974)
Published Print	51 years, 4 months ago (April 1, 1974)

Funders 0

None

BibTeX

@article{Nicolaides_1974, title={Amorphous semiconductor devices displaying memory in one polarity and threshold switching in the opposite polarity}, volume={24}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1655204}, DOI={10.1063/1.1655204}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Nicolaides, R. Vogel}, year={1974}, month=apr, pages={331–333} }

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