Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Epitaxial growth of alternating thin films of GaAs and Al was achieved on GaAs substrates of various orientations. In situ high-energy electron diffraction (HEED) analysis was used to monitor the molecular beam growth process. The following crystallographic relationship was observed: (100) GaAs on (110) Al on (100) GaAs substrates, with [110] GaAs parallel to [100] Al. An atomic interface model is proposed to explain the observed growth.

Bibliography

Ludeke, R., Chang, L. L., & Esaki, L. (1973). Molecular beam epitaxy of alternating metal-semiconductor films. Applied Physics Letters, 23(4), 201–203.

Authors 3
  1. R. Ludeke (first)
  2. L. L. Chang (additional)
  3. L. Esaki (additional)
References 8 Referenced 85
  1. 10.1063/1.1702842 / J. Appl. Phys. (1964)
  2. {'key': '2024020508214565900_r2', 'first-page': '358', 'volume': '6', 'year': '1968', 'journal-title': 'Electrochem. Technol.'} / Electrochem. Technol. (1968)
  3. 10.1007/BF02403061 / J. Mater. Sci. (1971)
  4. 10.1103/PhysRevLett.30.129 / Phys. Rev. Lett. (1973)
  5. 10.1116/1.1317919 / J. Vac. Sci. Technol. (1973)
  6. 10.1147/rd.95.0375 / IBM J. Res. Dev. (1965)
  7. 10.1063/1.1660490 / J. Appl. Phys. (1971)
  8. {'key': '2024020508214565900_r8'}
Dates
Type When
Created 21 years, 7 months ago (Jan. 30, 2004, 3:38 p.m.)
Deposited 1 year, 7 months ago (Feb. 5, 2024, 3:21 a.m.)
Indexed 1 year, 7 months ago (Feb. 5, 2024, 11:03 a.m.)
Issued 52 years ago (Aug. 15, 1973)
Published 52 years ago (Aug. 15, 1973)
Published Print 52 years ago (Aug. 15, 1973)
Funders 0

None

@article{Ludeke_1973, title={Molecular beam epitaxy of alternating metal-semiconductor films}, volume={23}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1654858}, DOI={10.1063/1.1654858}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ludeke, R. and Chang, L. L. and Esaki, L.}, year={1973}, month=aug, pages={201–203} }