Abstract
Epitaxial growth of alternating thin films of GaAs and Al was achieved on GaAs substrates of various orientations. In situ high-energy electron diffraction (HEED) analysis was used to monitor the molecular beam growth process. The following crystallographic relationship was observed: (100) GaAs on (110) Al on (100) GaAs substrates, with [110] GaAs parallel to [100] Al. An atomic interface model is proposed to explain the observed growth.
References
8
Referenced
85
10.1063/1.1702842
/ J. Appl. Phys. (1964){'key': '2024020508214565900_r2', 'first-page': '358', 'volume': '6', 'year': '1968', 'journal-title': 'Electrochem. Technol.'}
/ Electrochem. Technol. (1968)10.1007/BF02403061
/ J. Mater. Sci. (1971)10.1103/PhysRevLett.30.129
/ Phys. Rev. Lett. (1973)10.1116/1.1317919
/ J. Vac. Sci. Technol. (1973)10.1147/rd.95.0375
/ IBM J. Res. Dev. (1965)10.1063/1.1660490
/ J. Appl. Phys. (1971){'key': '2024020508214565900_r8'}
Dates
Type | When |
---|---|
Created | 21 years, 7 months ago (Jan. 30, 2004, 3:38 p.m.) |
Deposited | 1 year, 7 months ago (Feb. 5, 2024, 3:21 a.m.) |
Indexed | 1 year, 7 months ago (Feb. 5, 2024, 11:03 a.m.) |
Issued | 52 years ago (Aug. 15, 1973) |
Published | 52 years ago (Aug. 15, 1973) |
Published Print | 52 years ago (Aug. 15, 1973) |
@article{Ludeke_1973, title={Molecular beam epitaxy of alternating metal-semiconductor films}, volume={23}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1654858}, DOI={10.1063/1.1654858}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ludeke, R. and Chang, L. L. and Esaki, L.}, year={1973}, month=aug, pages={201–203} }