Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We observe that, when ZnIn2S4 monocrystals at a temperature below 170°K are illuminated by light of the gap energy, the dark resistance, after illumination, is lowered by about nine orders of magnitude. This high-conductivity state persists until the crystals are either (a) warmed to room temperature, (b) exposed to light of a definite energy less than the gap width, or (c) placed in an electric field. We propose a level 1.76 eV above the valence band, with a repulsive barrier of 0.11 eV, which an electron must penetrate to enter this level and recombine.

Bibliography

Romeo, N., Dallaturca, A., Braglia, R., & Sberveglieri, G. (1973). Charge storage in ZnIn2S4 single crystals. Applied Physics Letters, 22(1), 21–22.

Authors 4
  1. N. Romeo (first)
  2. A. Dallaturca (additional)
  3. R. Braglia (additional)
  4. G. Sberveglieri (additional)
References 6 Referenced 103
  1. 10.1063/1.1660487 / J. Appl. Phys. (1971)
  2. 10.1002/pssa.2210100213 / Phys. Status Solidi A (1972)
  3. 10.1524/zkri.1962.117.2-3.146 / Z. Kristallogr. (1962)
  4. 10.1143/JPSJ.19.1142 / J. Phys. Soc. Japan (1964)
  5. 10.1143/JPSJ.19.1150 / J. Phys. Soc. Japan (1964)
  6. 10.1103/PhysRev.125.126 / Phys. Rev. (1962)
Dates
Type When
Created 21 years, 6 months ago (Jan. 30, 2004, 3:35 p.m.)
Deposited 1 year, 6 months ago (Feb. 5, 2024, 3:07 a.m.)
Indexed 2 months ago (June 17, 2025, 9:15 p.m.)
Issued 52 years, 7 months ago (Jan. 1, 1973)
Published 52 years, 7 months ago (Jan. 1, 1973)
Published Print 52 years, 7 months ago (Jan. 1, 1973)
Funders 0

None

@article{Romeo_1973, title={Charge storage in ZnIn2S4 single crystals}, volume={22}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1654457}, DOI={10.1063/1.1654457}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Romeo, N. and Dallaturca, A. and Braglia, R. and Sberveglieri, G.}, year={1973}, month=jan, pages={21–22} }