Abstract
We observe that, when ZnIn2S4 monocrystals at a temperature below 170°K are illuminated by light of the gap energy, the dark resistance, after illumination, is lowered by about nine orders of magnitude. This high-conductivity state persists until the crystals are either (a) warmed to room temperature, (b) exposed to light of a definite energy less than the gap width, or (c) placed in an electric field. We propose a level 1.76 eV above the valence band, with a repulsive barrier of 0.11 eV, which an electron must penetrate to enter this level and recombine.
References
6
Referenced
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Dates
Type | When |
---|---|
Created | 21 years, 6 months ago (Jan. 30, 2004, 3:35 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 3:07 a.m.) |
Indexed | 2 months ago (June 17, 2025, 9:15 p.m.) |
Issued | 52 years, 7 months ago (Jan. 1, 1973) |
Published | 52 years, 7 months ago (Jan. 1, 1973) |
Published Print | 52 years, 7 months ago (Jan. 1, 1973) |
@article{Romeo_1973, title={Charge storage in ZnIn2S4 single crystals}, volume={22}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1654457}, DOI={10.1063/1.1654457}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Romeo, N. and Dallaturca, A. and Braglia, R. and Sberveglieri, G.}, year={1973}, month=jan, pages={21–22} }