Crossref
journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract
Molecular-beam epitaxy has been used successfully for the attainment of single-crystal multiple-layer structures with alternating types of conductivities (p/n) or band-gap energies (GaAs/AlxGa1−xAs). Deposition by the molecular-beam method offers the possibility of growing periodic-structure layers with constant chemical composition profiles and controlled uniform thicknesses.
References
8
Referenced
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Dates
Type | When |
---|---|
Created | 21 years, 6 months ago (Jan. 30, 2004, 3:20 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 2:44 a.m.) |
Indexed | 3 weeks, 1 day ago (Aug. 6, 2025, 9:48 a.m.) |
Issued | 53 years, 8 months ago (Dec. 1, 1971) |
Published | 53 years, 8 months ago (Dec. 1, 1971) |
Published Print | 53 years, 8 months ago (Dec. 1, 1971) |
@article{Cho_1971, title={Growth of Periodic Structures by the Molecular-Beam Method}, volume={19}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1653775}, DOI={10.1063/1.1653775}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Cho, A. Y.}, year={1971}, month=dec, pages={467–468} }