DOI: 10.1063/1.1653615. LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM

LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM

10.1063/1.1653615

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The backscattering method is employed to obtain microscopic information about solid-solid reactions of Si with thin layers (500–2000 Å) of both vacuum-evaporated Au and sputtered Pt. A remarkable observation is the migration of Si atoms into Au and Pt at relatively low temperatures (150 and 350 °C, respectively). Migration of Si in Pt induces first the formation of Pt2Si-like compounds and then PtSi. In the Au–Si system, on the other hand, Si moves through and accumulates on the Au surface in the form of SiO2 under an oxidizing heat-treatment atmosphere.

Bibliography

Hiraki, A., Nicolet, M.-A., & Mayer, J. W. (1971). LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM. Applied Physics Letters, 18(5), 178â181.

Authors 3

A. Hiraki (first)
M-A. Nicolet (additional)
J. W. Mayer (additional)

References 8 Referenced 181

{'key': '2024020507271587000_r1'}
10.1016/0039-6028(70)90081-6 / Surface Sci. (1970)
10.1063/1.1653422 / Appl. Phys. Letters (1970)
10.1143/JJAP.7.785 / Japan. J. Appl. Phys. (1968)
{'key': '2024020507271587000_r3a'}
{'key': '2024020507271587000_r4'}
{'key': '2024020507271587000_r5'}
{'key': '2024020507271587000_r6'}

Dates

Type	When
Created	21 years, 6 months ago (Feb. 4, 2004, 11:43 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 2:27 a.m.)
Indexed	2 months, 2 weeks ago (June 6, 2025, 12:18 a.m.)
Issued	54 years, 5 months ago (March 1, 1971)
Published	54 years, 5 months ago (March 1, 1971)
Published Print	54 years, 5 months ago (March 1, 1971)

Funders 0

None

BibTeX

@article{Hiraki_1971, title={LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM}, volume={18}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1653615}, DOI={10.1063/1.1653615}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hiraki, A. and Nicolet, M-A. and Mayer, J. W.}, year={1971}, month=mar, pages={178–181} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        6,
        6
      ]
    ],
    "date-time": "2025-06-06T04:18:35Z",
    "timestamp": 1749183515592
  },
  "reference-count": 8,
  "publisher": "AIP Publishing",
  "issue": "5",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1971,
        3,
        1
      ]
    ]
  },
  "abstract": "<jats:p>The backscattering method is employed to obtain microscopic information about solid-solid reactions of Si with thin layers (500\u20132000 \u00c5) of both vacuum-evaporated Au and sputtered Pt. A remarkable observation is the migration of Si atoms into Au and Pt at relatively low temperatures (150 and 350 \u00b0C, respectively). Migration of Si in Pt induces first the formation of Pt2Si-like compounds and then PtSi. In the Au\u2013Si system, on the other hand, Si moves through and accumulates on the Au surface in the form of SiO2 under an oxidizing heat-treatment atmosphere.</jats:p>",
  "DOI": "10.1063/1.1653615",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2004,
        2,
        4
      ]
    ],
    "date-time": "2004-02-04T16:43:31Z",
    "timestamp": 1075913011000
  },
  "page": "178-181",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 181,
  "title": "LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM",
  "prefix": "10.1063",
  "volume": "18",
  "author": [
    {
      "given": "A.",
      "family": "Hiraki",
      "sequence": "first",
      "affiliation": [
        {
          "name": "California Institute of Technology, Pasadena, California 91109"
        }
      ]
    },
    {
      "given": "M-A.",
      "family": "Nicolet",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "California Institute of Technology, Pasadena, California 91109"
        }
      ]
    },
    {
      "given": "J. W.",
      "family": "Mayer",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "California Institute of Technology, Pasadena, California 91109"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020507271587000_r1"
    },
    {
      "key": "2024020507271587000_r2",
      "doi-asserted-by": "crossref",
      "first-page": "263",
      "DOI": "10.1016/0039-6028(70)90081-6",
      "volume": "22",
      "year": "1970",
      "journal-title": "Surface Sci."
    },
    {
      "key": "2024020507271587000_r2a",
      "doi-asserted-by": "crossref",
      "first-page": "332",
      "DOI": "10.1063/1.1653422",
      "volume": "17",
      "year": "1970",
      "journal-title": "Appl. Phys. Letters"
    },
    {
      "key": "2024020507271587000_r3",
      "doi-asserted-by": "crossref",
      "first-page": "785",
      "DOI": "10.1143/JJAP.7.785",
      "volume": "7",
      "year": "1968",
      "journal-title": "Japan. J. Appl. Phys."
    },
    {
      "key": "2024020507271587000_r3a"
    },
    {
      "key": "2024020507271587000_r4"
    },
    {
      "key": "2024020507271587000_r5"
    },
    {
      "key": "2024020507271587000_r6"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/18/5/178/18424347/178_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/18/5/178/18424347/178_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T07:27:23Z",
    "timestamp": 1707118043000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/18/5/178/147920/LOW-TEMPERATURE-MIGRATION-OF-SILICON-IN-THIN"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1971,
        3,
        1
      ]
    ]
  },
  "references-count": 8,
  "journal-issue": {
    "issue": "5",
    "published-print": {
      "date-parts": [
        [
          1971,
          3,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1653615",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1971,
        3,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1971,
        3,
        1
      ]
    ]
  }
}