Abstract
Surface barrier p-n junction diodes made from high-purity n-GaAs grown by liquid-phase epitaxy, have been operated as α-particle and low-energy γ-ray detectors over the range 77–373°K. Resolutions observed were 1.2 and 2.95 keV (FWHM) at 130 and 295°K, respectively, for 122-keV γ rays and 30 keV for 5.47-MeV α particles. The energy per electron hole pair for α particles is 4.51 eV and the Fano factor for γ rays is ≤0.24 at 130°K.
References
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Dates
Type | When |
---|---|
Created | 21 years, 6 months ago (Jan. 30, 2004, 3:19 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 2:23 a.m.) |
Indexed | 2 months, 3 weeks ago (May 27, 2025, 7:04 a.m.) |
Issued | 54 years, 9 months ago (Nov. 15, 1970) |
Published | 54 years, 9 months ago (Nov. 15, 1970) |
Published Print | 54 years, 9 months ago (Nov. 15, 1970) |
@article{Eberhardt_1970, title={HIGH-RESOLUTION NUCLEAR RADIATION DETECTORS FROM EPITAXIAL n-GaAs}, volume={17}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1653257}, DOI={10.1063/1.1653257}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Eberhardt, J. E. and Ryan, R. D. and Tavendale, A. J.}, year={1970}, month=nov, pages={427–429} }