DOI: 10.1063/1.1652970. ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON

ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON

10.1063/1.1652970

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The first EPR measurements of the identity of defects in an ion-implanted layer (&lt; 15 000 Å) are reported. The Si–P3 center is the dominant paramagnetic defect produced at room temperature by 400-keV O+ implantation in Al- and B-doped Lopex Si, and it anneals below 200°C. The Si–P1 center is the dominant defect remaining above 200°C, and it anneals near 350°C. Interstitial Al++ (Si–G18) are observed in the Al-doped sample; their number indicate that Si interstitials do not migrate over large distances into the unirradiated Si. Comparison of EPR and infrared data indicates that the Si divacancy is produced in the diamagnetic neutral charge state.

Bibliography

Brower, K. L., Vook, F. L., & Borders, J. A. (1969). ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON. Applied Physics Letters, 15(7), 208â210.

Authors 3

K. L. Brower (first)
F. L. Vook (additional)
J. A. Borders (additional)

References 9 Referenced 50

10.1063/1.1652670 / Appl. Phys. Letters (1969)
{'key': '2024020507021386500_r2'}
{'key': '2024020507021386500_r3'}
{'key': '2024020507021386500_r4'}
10.1103/PhysRev.132.648 / Phys. Rev. (1963)
10.1103/PhysRev.128.1605 / Phys. Rev. (1962)
10.1103/PhysRev.152.761 / Phys. Rev. (1966)
{'key': '2024020507021386500_r8'}
10.1103/PhysRev.155.802 / Phys. Rev. (1967)

Dates

Type	When
Created	21 years, 7 months ago (Jan. 30, 2004, 3:11 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 2:02 a.m.)
Indexed	1 year, 6 months ago (Feb. 6, 2024, 8:31 a.m.)
Issued	55 years, 11 months ago (Oct. 1, 1969)
Published	55 years, 11 months ago (Oct. 1, 1969)
Published Print	55 years, 11 months ago (Oct. 1, 1969)

Funders 0

None

BibTeX

@article{Brower_1969, title={ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON}, volume={15}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1652970}, DOI={10.1063/1.1652970}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Brower, K. L. and Vook, F. L. and Borders, J. A.}, year={1969}, month=oct, pages={208–210} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        6
      ]
    ],
    "date-time": "2024-02-06T13:31:05Z",
    "timestamp": 1707226265006
  },
  "reference-count": 9,
  "publisher": "AIP Publishing",
  "issue": "7",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1969,
        10,
        1
      ]
    ]
  },
  "abstract": "<jats:p>The first EPR measurements of the identity of defects in an ion-implanted layer (&amp;lt; 15 000 \u00c5) are reported. The Si\u2013P3 center is the dominant paramagnetic defect produced at room temperature by 400-keV O+ implantation in Al- and B-doped Lopex Si, and it anneals below 200\u00b0C. The Si\u2013P1 center is the dominant defect remaining above 200\u00b0C, and it anneals near 350\u00b0C. Interstitial Al++ (Si\u2013G18) are observed in the Al-doped sample; their number indicate that Si interstitials do not migrate over large distances into the unirradiated Si. Comparison of EPR and infrared data indicates that the Si divacancy is produced in the diamagnetic neutral charge state.</jats:p>",
  "DOI": "10.1063/1.1652970",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2004,
        1,
        30
      ]
    ],
    "date-time": "2004-01-30T20:11:53Z",
    "timestamp": 1075493513000
  },
  "page": "208-210",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 50,
  "title": "ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON",
  "prefix": "10.1063",
  "volume": "15",
  "author": [
    {
      "given": "K. L.",
      "family": "Brower",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Sandia Laboratories, Albuquerque, New Mexico 87115"
        }
      ]
    },
    {
      "given": "F. L.",
      "family": "Vook",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Sandia Laboratories, Albuquerque, New Mexico 87115"
        }
      ]
    },
    {
      "given": "J. A.",
      "family": "Borders",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Sandia Laboratories, Albuquerque, New Mexico 87115"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020507021386500_r1",
      "doi-asserted-by": "crossref",
      "first-page": "328",
      "DOI": "10.1063/1.1652670",
      "volume": "14",
      "year": "1969",
      "journal-title": "Appl. Phys. Letters"
    },
    {
      "key": "2024020507021386500_r2"
    },
    {
      "key": "2024020507021386500_r3"
    },
    {
      "key": "2024020507021386500_r4"
    },
    {
      "key": "2024020507021386500_r5",
      "doi-asserted-by": "crossref",
      "first-page": "648",
      "DOI": "10.1103/PhysRev.132.648",
      "volume": "132",
      "year": "1963",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020507021386500_r6",
      "doi-asserted-by": "crossref",
      "first-page": "1605",
      "DOI": "10.1103/PhysRev.128.1605",
      "volume": "128",
      "year": "1962",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020507021386500_r7",
      "doi-asserted-by": "crossref",
      "first-page": "761",
      "DOI": "10.1103/PhysRev.152.761",
      "volume": "152",
      "year": "1966",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020507021386500_r8"
    },
    {
      "key": "2024020507021386500_r9",
      "doi-asserted-by": "crossref",
      "first-page": "802",
      "DOI": "10.1103/PhysRev.155.802",
      "volume": "155",
      "year": "1967",
      "journal-title": "Phys. Rev."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/15/7/208/18422611/208_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/15/7/208/18422611/208_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T07:02:22Z",
    "timestamp": 1707116542000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/15/7/208/41811/ELECTRON-PARAMAGNETIC-RESONANCE-OF-DEFECTS-IN-ION"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1969,
        10,
        1
      ]
    ]
  },
  "references-count": 9,
  "journal-issue": {
    "issue": "7",
    "published-print": {
      "date-parts": [
        [
          1969,
          10,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1652970",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1969,
        10,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1969,
        10,
        1
      ]
    ]
  }
}