Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Injection of carriers into thermally grown SiO2 from an avalanche plasma in silicon is a new way of achieving high current densities in SiO2. Electron injection from p-type silicon and hole injection from n-type silicon by hot carrier emission have been observed. Average electron current densities as high as 10−2 A/cm2 have been observed to flow through 1000 Å of SiO2. The oxide becomes negatively charged as a result of electron injection and positively charged as a result of hole injection. These charging effects appear to be related to the presence of water in the oxide.

Bibliography

Nicollian, E. H., Goetzberger, A., & Berglund, C. N. (1969). AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2. Applied Physics Letters, 15(6), 174–177.

Authors 3
  1. E. H. Nicollian (first)
  2. A. Goetzberger (additional)
  3. C. N. Berglund (additional)
References 16 Referenced 132
  1. 10.1103/PhysRev.140.A569 / Phys. Rev. (1965)
  2. 10.1016/0038-1098(67)90715-6 / Solid State Commun. (1967)
  3. 10.1063/1.1657043 / J. Appl. Phys. (1969)
  4. {'key': '2024020507003971000_r3', 'first-page': '686', 'volume': 'ED-15', 'year': '1968', 'journal-title': 'Trans. Electron Dev.'} / Trans. Electron Dev. (1968)
  5. 10.1063/1.1709189 / J. Appl. Phys. (1967)
  6. {'key': '2024020507003971000_r5'}
  7. {'key': '2024020507003971000_r6'}
  8. {'key': '2024020507003971000_r7'}
  9. {'key': '2024020507003971000_r8'}
  10. {'key': '2024020507003971000_r9'}
  11. 10.1103/PhysRev.130.972 / Phys. Rev. (1963)
  12. 10.1149/1.2426565 / J. Electrochem. Soc. (1967)
  13. 10.1039/tf9615702247 / Trans. Faraday Soc. (1961)
  14. {'key': '2024020507003971000_r13', 'first-page': '35', 'volume': '5', 'year': '1964', 'journal-title': 'Phys. Chem. Glasses'} / Phys. Chem. Glasses (1964)
  15. {'key': '2024020507003971000_r14'}
  16. {'key': '2024020507003971000_r15'}
Dates
Type When
Created 21 years, 6 months ago (Jan. 30, 2004, 3:11 p.m.)
Deposited 1 year, 6 months ago (Feb. 5, 2024, 2 a.m.)
Indexed 1 year ago (Aug. 14, 2024, 11:08 a.m.)
Issued 55 years, 11 months ago (Sept. 15, 1969)
Published 55 years, 11 months ago (Sept. 15, 1969)
Published Print 55 years, 11 months ago (Sept. 15, 1969)
Funders 0

None

@article{Nicollian_1969, title={AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2}, volume={15}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1652955}, DOI={10.1063/1.1652955}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Nicollian, E. H. and Goetzberger, A. and Berglund, C. N.}, year={1969}, month=sep, pages={174–177} }