Abstract
Injection of carriers into thermally grown SiO2 from an avalanche plasma in silicon is a new way of achieving high current densities in SiO2. Electron injection from p-type silicon and hole injection from n-type silicon by hot carrier emission have been observed. Average electron current densities as high as 10−2 A/cm2 have been observed to flow through 1000 Å of SiO2. The oxide becomes negatively charged as a result of electron injection and positively charged as a result of hole injection. These charging effects appear to be related to the presence of water in the oxide.
References
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Dates
Type | When |
---|---|
Created | 21 years, 6 months ago (Jan. 30, 2004, 3:11 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 2 a.m.) |
Indexed | 1 year ago (Aug. 14, 2024, 11:08 a.m.) |
Issued | 55 years, 11 months ago (Sept. 15, 1969) |
Published | 55 years, 11 months ago (Sept. 15, 1969) |
Published Print | 55 years, 11 months ago (Sept. 15, 1969) |
@article{Nicollian_1969, title={AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2}, volume={15}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1652955}, DOI={10.1063/1.1652955}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Nicollian, E. H. and Goetzberger, A. and Berglund, C. N.}, year={1969}, month=sep, pages={174–177} }