Crossref
journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract
Isochronal annealing studies have been conducted on implanted boron and phosphorus layers in silicon. It is shown that the sheet conductance rise on annealing is dependent on the temperature at which the silicon is maintained during implantation. From the standpoint of conductance, low-temperature implanting is to be favored.
References
6
Referenced
53
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/ IEEE Trans. Electron Devices (1967)
Dates
Type | When |
---|---|
Created | 21 years, 6 months ago (Jan. 30, 2004, 3:10 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 1:53 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 5, 2024, 3:41 a.m.) |
Issued | 56 years, 4 months ago (April 1, 1969) |
Published | 56 years, 4 months ago (April 1, 1969) |
Published Print | 56 years, 4 months ago (April 1, 1969) |
@article{Davies_1969, title={POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICON}, volume={14}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1652790}, DOI={10.1063/1.1652790}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Davies, D. Eirug}, year={1969}, month=apr, pages={227–229} }