Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Isochronal annealing studies have been conducted on implanted boron and phosphorus layers in silicon. It is shown that the sheet conductance rise on annealing is dependent on the temperature at which the silicon is maintained during implantation. From the standpoint of conductance, low-temperature implanting is to be favored.

Bibliography

Davies, D. E. (1969). POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICON. Applied Physics Letters, 14(7), 227–229.

Authors 1
  1. D. Eirug Davies (first)
References 6 Referenced 53
  1. 10.1149/1.2411148 / J. Electro-Chem. Soc. (1968)
  2. 10.1139/p68-083 / Can. J. Phys. (1968)
  3. {'key': '2024020506534714100_r3', 'first-page': '689', 'volume': '46', 'year': '1968', 'journal-title': 'Can. J. Phys.'} / Can. J. Phys. (1968)
  4. 10.1139/p67-340 / Can. J. Phys. (1967)
  5. {'key': '2024020506534714100_r5', 'first-page': '22', 'volume': 'NS-13', 'year': '1965', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1965)
  6. {'key': '2024020506534714100_r6', 'first-page': '10', 'volume': 'ED-14', 'year': '1967', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1967)
Dates
Type When
Created 21 years, 6 months ago (Jan. 30, 2004, 3:10 p.m.)
Deposited 1 year, 6 months ago (Feb. 5, 2024, 1:53 a.m.)
Indexed 1 year, 6 months ago (Feb. 5, 2024, 3:41 a.m.)
Issued 56 years, 4 months ago (April 1, 1969)
Published 56 years, 4 months ago (April 1, 1969)
Published Print 56 years, 4 months ago (April 1, 1969)
Funders 0

None

@article{Davies_1969, title={POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICON}, volume={14}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1652790}, DOI={10.1063/1.1652790}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Davies, D. Eirug}, year={1969}, month=apr, pages={227–229} }