DOI: 10.1063/1.1651935. THE EPITAXY OF COPPER ON SAPPHIRE

10.1063/1.1651935

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Epitaxial twinned single-crystal films of copper have been grown on sapphire substrates by high vacuum evaporation in the temperature range 240–-375°C. The presence of a twin relationship in copper deposited on the basal plane of sapphire was demonstrated and evaluated by x-ray diffraction techniques. The epitaxy has been shown to be (111)Cu ∥ (0001)α−Al2O3; [21̄1̄)Cu ∥ [21̄1̄0]α−Al2O3. The films have been found to exhibit the bulk metal resistivity.

Bibliography

Katz, G. (1968). THE EPITAXY OF COPPER ON SAPPHIRE. Applied Physics Letters, 12(5), 161â163.

Authors 1

Gerald Katz (first)

References 3 Referenced 54

{'key': '2024020506361269200_r1'}
{'key': '2024020506361269200_r2'}
{'key': '2024020506361269200_r3', 'first-page': '549', 'volume': '233', 'year': '1965', 'journal-title': 'Trans. Met. Soc. AIME'} / Trans. Met. Soc. AIME (1965)

Dates

Type	When
Created	21 years, 7 months ago (Jan. 30, 2004, 3:03 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 1:36 a.m.)
Indexed	3 months, 2 weeks ago (May 20, 2025, 7:32 a.m.)
Issued	57 years, 6 months ago (March 1, 1968)
Published	57 years, 6 months ago (March 1, 1968)
Published Print	57 years, 6 months ago (March 1, 1968)

Funders 0

None

BibTeX

@article{Katz_1968, title={THE EPITAXY OF COPPER ON SAPPHIRE}, volume={12}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1651935}, DOI={10.1063/1.1651935}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Katz, Gerald}, year={1968}, month=mar, pages={161–163} }

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