DOI: 10.1063/1.1651337. Degradation mechanism limiting the lifetime of ZnSe-based white light-emitting diodes

Degradation mechanism limiting the lifetime of ZnSe-based white light-emitting diodes

10.1063/1.1651337

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The degradation mechanism responsible for limiting the lifetime of ZnSe-based white light-emitting diodes was studied. A systematic investigation on the effects of pre-existing stacking faults and threading dislocations, along with point defects in the epitaxial layers was conducted by monitoring their behavior during an aging experiment. Our experimental results, in conjunction with numerical calculations performed on degraded device structures, suggest that the deterioration of the internal quantum efficiency owing to the reduction of the net acceptor concentration in the p-ZnMgSSe cladding layer is responsible for the decline of the optical output power. The reduction in the free hole concentration has an effect of increasing the electron leakage current, leading to a decrease in the carrier injection efficiency. It is also proposed that the carrier depletion effect in the p-cladding layer is due to self-compensation resulting from the increase in the concentration of N-related deep donors.

Bibliography

Katayama, K., & Nakamura, T. (2004). Degradation mechanism limiting the lifetime of ZnSe-based white light-emitting diodes. Journal of Applied Physics, 95(7), 3576â3581.

Authors 2

Koji Katayama (first)
Takao Nakamura (additional)

References 19 Referenced 16

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10.1016/S0022-0248(00)00275-X / J. Cryst. Growth (2000)
10.1063/1.121781 / Appl. Phys. Lett. (1998)
{'key': '2024020718172629500_r5'}
10.1016/0022-0248(95)00870-5 / J. Cryst. Growth (1996)
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Dates

Type	When
Created	21 years, 5 months ago (March 16, 2004, 6:03 p.m.)
Deposited	1 year, 6 months ago (Feb. 7, 2024, 7:03 p.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 8:21 p.m.)
Issued	21 years, 4 months ago (April 1, 2004)
Published	21 years, 4 months ago (April 1, 2004)
Published Print	21 years, 4 months ago (April 1, 2004)

Funders 0

None

BibTeX

@article{Katayama_2004, title={Degradation mechanism limiting the lifetime of ZnSe-based white light-emitting diodes}, volume={95}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1651337}, DOI={10.1063/1.1651337}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Katayama, Koji and Nakamura, Takao}, year={2004}, month=apr, pages={3576–3581} }

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