Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We report AlGaN-based back-illuminated solar-blind ultraviolet p-i-n photodetectors with a peak responsivity of 136 mA/W at 282 nm without bias. This corresponds to a high external quantum efficiency of 60%, which improves to a value as high as 72% under 5 V reverse bias. We attribute the high performance of these devices to the use of a very-high quality AlN and Al0.87Ga0.13N/AlN superlattice material and a highly conductive Si–In co-doped Al0.5Ga0.5N layer.

Bibliography

McClintock, R., Yasan, A., Mayes, K., Shiell, D., Darvish, S. R., Kung, P., & Razeghi, M. (2004). High quantum efficiency AlGaN solar-blind p-i-n photodiodes. Applied Physics Letters, 84(8), 1248–1250.

Authors 7
  1. R. McClintock (first)
  2. A. Yasan (additional)
  3. K. Mayes (additional)
  4. D. Shiell (additional)
  5. S. R. Darvish (additional)
  6. P. Kung (additional)
  7. M. Razeghi (additional)
References 11 Referenced 112
  1. 10.1117/12.467650 / Proc. SPIE (2002)
  2. 10.1109/JPROC.2002.1021565 / Proc. IEEE (2002)
  3. 10.1063/1.1494858 / Appl. Phys. Lett. (2002)
  4. 10.1063/1.1633019 / Appl. Phys. Lett. (2003)
  5. 10.1063/1.1531835 / Appl. Phys. Lett. (2002)
  6. {'key': '2024020402274621900_r6', 'first-page': '414', 'volume': '159–160', 'year': '2000', 'journal-title': 'Appl. Surf. Sci.'} / Appl. Surf. Sci. (2000)
  7. 10.1063/1.1577410 / Appl. Phys. Lett. (2003)
  8. 10.1063/1.1402159 / Appl. Phys. Lett. (2001)
  9. 10.1063/1.124942 / Appl. Phys. Lett. (1999)
  10. 10.1016/S0022-0248(01)01467-1 / J. Cryst. Growth (2001)
  11. 10.1063/1.1480484 / Appl. Phys. Lett. (2002)
Dates
Type When
Created 21 years, 6 months ago (Feb. 12, 2004, 6:03 p.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 9:27 p.m.)
Indexed 2 days, 13 hours ago (Aug. 28, 2025, 8:07 a.m.)
Issued 21 years, 6 months ago (Feb. 23, 2004)
Published 21 years, 6 months ago (Feb. 23, 2004)
Published Print 21 years, 6 months ago (Feb. 23, 2004)
Funders 0

None

@article{McClintock_2004, title={High quantum efficiency AlGaN solar-blind p-i-n photodiodes}, volume={84}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1650550}, DOI={10.1063/1.1650550}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={McClintock, R. and Yasan, A. and Mayes, K. and Shiell, D. and Darvish, S. R. and Kung, P. and Razeghi, M.}, year={2004}, month=feb, pages={1248–1250} }