Abstract
We report AlGaN-based back-illuminated solar-blind ultraviolet p-i-n photodetectors with a peak responsivity of 136 mA/W at 282 nm without bias. This corresponds to a high external quantum efficiency of 60%, which improves to a value as high as 72% under 5 V reverse bias. We attribute the high performance of these devices to the use of a very-high quality AlN and Al0.87Ga0.13N/AlN superlattice material and a highly conductive Si–In co-doped Al0.5Ga0.5N layer.
References
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Dates
Type | When |
---|---|
Created | 21 years, 6 months ago (Feb. 12, 2004, 6:03 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 9:27 p.m.) |
Indexed | 2 days, 13 hours ago (Aug. 28, 2025, 8:07 a.m.) |
Issued | 21 years, 6 months ago (Feb. 23, 2004) |
Published | 21 years, 6 months ago (Feb. 23, 2004) |
Published Print | 21 years, 6 months ago (Feb. 23, 2004) |
@article{McClintock_2004, title={High quantum efficiency AlGaN solar-blind p-i-n photodiodes}, volume={84}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1650550}, DOI={10.1063/1.1650550}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={McClintock, R. and Yasan, A. and Mayes, K. and Shiell, D. and Darvish, S. R. and Kung, P. and Razeghi, M.}, year={2004}, month=feb, pages={1248–1250} }