DOI: 10.1063/1.1648134. AlGaN/GaN-based metal–oxide–semiconductor diode-based hydrogen gas sensor

AlGaN/GaN-based metal–oxide–semiconductor diode-based hydrogen gas sensor

10.1063/1.1648134

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The characteristics of Sc2O3/AlGaN/GaN metal–oxide–semiconductor (MOS) diodes as hydrogen gas sensors are reported. At 25 °C, a change in forward current of ∼6 mA at a bias of 2 V was obtained in response to a change in ambient from pure N2 to 10% H2/90% N2. This is approximately double the change in forward current obtained in Pt/GaN Schottky diodes measured under the same conditions. The mechanism of the change in forward gate current appears to be formation of a dipole layer at the oxide/GaN interface that screens some of the piezo-induced channel charge. The MOS-diode response time is limited by the mass transport of gas into the test chamber and not by the diffusion of atomic hydrogen through the metal/oxide stack, even at 25 °C. These devices look promising for applications requiring sensitive, long-term stable detection of combustion gases.

Bibliography

Kang, B. S., Ren, F., Gila, B. P., Abernathy, C. R., & Pearton, S. J. (2004). AlGaN/GaN-based metalâoxideâsemiconductor diode-based hydrogen gas sensor. Applied Physics Letters, 84(7), 1123â1125.

Authors 5

B. S. Kang (first)
F. Ren (additional)
B. P. Gila (additional)
C. R. Abernathy (additional)
S. J. Pearton (additional)

References 38 Referenced 82

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Dates

Type	When
Created	21 years, 6 months ago (Feb. 5, 2004, 6:02 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 9:22 p.m.)
Indexed	1 year, 1 month ago (July 10, 2024, 4:01 p.m.)
Issued	21 years, 6 months ago (Feb. 16, 2004)
Published	21 years, 6 months ago (Feb. 16, 2004)
Published Print	21 years, 6 months ago (Feb. 16, 2004)

Funders 0

None

BibTeX

@article{Kang_2004, title={AlGaN/GaN-based metal–oxide–semiconductor diode-based hydrogen gas sensor}, volume={84}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1648134}, DOI={10.1063/1.1648134}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kang, B. S. and Ren, F. and Gila, B. P. and Abernathy, C. R. and Pearton, S. J.}, year={2004}, month=feb, pages={1123–1125} }

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