DOI: 10.1063/1.1639513. Organic field effect transistors based on modified oligo-p-phenylevinylenes

Organic field effect transistors based on modified oligo-p-phenylevinylenes

10.1063/1.1639513

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report on an organic field effect transistor device based on a modified oligomer oligo-p-phenylevinylene, 1,4-bis[4-(4-octylphenyl)styryl]-benzene. The effect of growth temperature on the morphology of the organic films and their electrical properties was investigated. Substrates coated with hexamethyldisilazane prior to organic film deposition showed improved electrical characteristics, but a negligible difference with respect to film morphology. A maximum hole mobility of μ=0.12 cm2/V s with an on–off current ratio Ion/off&gt;106 were measured in films deposited at a substrate temperature of 150 °C.

Bibliography

Gorjanc, T. C., LÃ©vesque, I., & DâIorio, M. (2004). Organic field effect transistors based on modified oligo-p-phenylevinylenes. Applied Physics Letters, 84(6), 930â932.

Authors 3

T. C. Gorjanc (first)
I. Lévesque (additional)
M. D’Iorio (additional)

References 29 Referenced 44

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{'key': '2024020402260417500_r29'}

Dates

Type	When
Created	21 years, 7 months ago (Feb. 4, 2004, 1:08 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 9:26 p.m.)
Indexed	4 months, 1 week ago (April 26, 2025, 1:04 a.m.)
Issued	21 years, 6 months ago (Feb. 9, 2004)
Published	21 years, 6 months ago (Feb. 9, 2004)
Published Print	21 years, 6 months ago (Feb. 9, 2004)

Funders 0

None

BibTeX

@article{Gorjanc_2004, title={Organic field effect transistors based on modified oligo-p-phenylevinylenes}, volume={84}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1639513}, DOI={10.1063/1.1639513}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Gorjanc, T. C. and Lévesque, I. and D’Iorio, M.}, year={2004}, month=feb, pages={930–932} }

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