Abstract
InGaN quantum wells have been found to be extremely sensitive to exposure to the electron beam in the transmission electron microscope (TEM). High-resolution TEM images acquired immediately after first irradiating a region of quantum well indicates no gross fluctuations of indium content in the InGaN alloy. During only a brief period of irradiation, inhomogeneous strain is introduced in the material due to electron beam damage. This strain is very similar to that expected from genuine nanometer-scale indium composition fluctuations which suggests there is the possibility of falsely detecting indium-rich “clusters” in a homogeneous quantum well.
References
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Dates
Type | When |
---|---|
Created | 21 years, 8 months ago (Dec. 19, 2003, 6:12 p.m.) |
Deposited | 1 year, 7 months ago (Feb. 3, 2024, 9:05 p.m.) |
Indexed | 1 month ago (Aug. 6, 2025, 9:25 a.m.) |
Issued | 21 years, 8 months ago (Dec. 29, 2003) |
Published | 21 years, 8 months ago (Dec. 29, 2003) |
Published Print | 21 years, 8 months ago (Dec. 29, 2003) |
@article{Smeeton_2003, title={Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1636534}, DOI={10.1063/1.1636534}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Smeeton, T. M. and Kappers, M. J. and Barnard, J. S. and Vickers, M. E. and Humphreys, C. J.}, year={2003}, month=dec, pages={5419–5421} }