Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

InGaN quantum wells have been found to be extremely sensitive to exposure to the electron beam in the transmission electron microscope (TEM). High-resolution TEM images acquired immediately after first irradiating a region of quantum well indicates no gross fluctuations of indium content in the InGaN alloy. During only a brief period of irradiation, inhomogeneous strain is introduced in the material due to electron beam damage. This strain is very similar to that expected from genuine nanometer-scale indium composition fluctuations which suggests there is the possibility of falsely detecting indium-rich “clusters” in a homogeneous quantum well.

Bibliography

Smeeton, T. M., Kappers, M. J., Barnard, J. S., Vickers, M. E., & Humphreys, C. J. (2003). Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope. Applied Physics Letters, 83(26), 5419–5421.

Authors 5
  1. T. M. Smeeton (first)
  2. M. J. Kappers (additional)
  3. J. S. Barnard (additional)
  4. M. E. Vickers (additional)
  5. C. J. Humphreys (additional)
References 12 Referenced 243
  1. {'key': '2024020402054992500_r1'}
  2. {'key': '2024020402054992500_r2', 'first-page': '2475', 'volume': '62', 'year': '2000', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (2000)
  3. 10.1063/1.117683 / Appl. Phys. Lett. (1996)
  4. 10.1063/1.118455 / Appl. Phys. Lett. (1997)
  5. 10.1063/1.1410362 / Appl. Phys. Lett. (2001)
  6. 10.1063/1.1473666 / J. Appl. Phys. (2002)
  7. 10.1002/(SICI)1521-396X(200001)177:1<145::AID-PSSA145>3.0.CO;2-0 / Phys. Status Solidi A (2000)
  8. 10.1007/s11664-997-0002-2 / J. Electron. Mater. (1997)
  9. 10.1063/1.1323542 / Appl. Phys. Lett. (2000)
  10. 10.1063/1.1587251 / J. Appl. Phys. (2003)
  11. 10.1002/pssb.200303262 / Phys. Status Solidi B (2003)
  12. 10.1063/1.1543642 / Appl. Phys. Lett. (2003)
Dates
Type When
Created 21 years, 8 months ago (Dec. 19, 2003, 6:12 p.m.)
Deposited 1 year, 7 months ago (Feb. 3, 2024, 9:05 p.m.)
Indexed 1 month ago (Aug. 6, 2025, 9:25 a.m.)
Issued 21 years, 8 months ago (Dec. 29, 2003)
Published 21 years, 8 months ago (Dec. 29, 2003)
Published Print 21 years, 8 months ago (Dec. 29, 2003)
Funders 0

None

@article{Smeeton_2003, title={Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1636534}, DOI={10.1063/1.1636534}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Smeeton, T. M. and Kappers, M. J. and Barnard, J. S. and Vickers, M. E. and Humphreys, C. J.}, year={2003}, month=dec, pages={5419–5421} }