DOI: 10.1063/1.1633982. Bulk and metastable defects in CuIn1−xGaxSe2 thin films using drive-level capacitance profiling

Bulk and metastable defects in CuIn1−xGaxSe2 thin films using drive-level capacitance profiling

10.1063/1.1633982

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The drive-level capacitance profiling technique has been applied to ZnO/CdS/CuIn1−xGaxSe2/Mo solar cell devices, in order to study properties of defects in the CuIn1−xGaxSe2 film. Properties studied include the spatial uniformity, bulk defect response, carrier density, and light-induced metastable effects. These results indicate that previous estimates of carrier densities, from C–V profiling, may be significantly overestimated. In addition, a defect response previously thought to be located at the interface is observed to exist throughout the bulk material. Finally, an infrared light-soaking treatment is demonstrated to induce metastable changes in the bulk CuIn1−xGaxSe2 film. Hence, the drive-level capacitance profiling technique provides valuable insights into these films. Herein, the technique itself is fully explained, compared to other junction capacitance methods, and its utility is demonstrated using numerical simulation.

Bibliography

Heath, J. T., Cohen, J. D., & Shafarman, W. N. (2004). Bulk and metastable defects in CuIn1âxGaxSe2 thin films using drive-level capacitance profiling. Journal of Applied Physics, 95(3), 1000â1010.

Authors 3

Jennifer T. Heath (first)
J. David Cohen (additional)
William N. Shafarman (additional)

References 37 Referenced 450

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Dates

Type	When
Created	21 years, 7 months ago (Jan. 24, 2004, 11:12 p.m.)
Deposited	1 year, 6 months ago (Feb. 7, 2024, 6:55 p.m.)
Indexed	1 day, 20 hours ago (Aug. 31, 2025, 6:06 a.m.)
Issued	21 years, 7 months ago (Feb. 1, 2004)
Published	21 years, 7 months ago (Feb. 1, 2004)
Published Print	21 years, 7 months ago (Feb. 1, 2004)

Funders 0

None

BibTeX

@article{Heath_2004, title={Bulk and metastable defects in CuIn1−xGaxSe2 thin films using drive-level capacitance profiling}, volume={95}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1633982}, DOI={10.1063/1.1633982}, number={3}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Heath, Jennifer T. and Cohen, J. David and Shafarman, William N.}, year={2004}, month=feb, pages={1000–1010} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        31
      ]
    ],
    "date-time": "2025-08-31T10:06:40Z",
    "timestamp": 1756634800013
  },
  "reference-count": 37,
  "publisher": "AIP Publishing",
  "issue": "3",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2004,
        2,
        1
      ]
    ]
  },
  "abstract": "<jats:p>The drive-level capacitance profiling technique has been applied to ZnO/CdS/CuIn1\u2212xGaxSe2/Mo solar cell devices, in order to study properties of defects in the CuIn1\u2212xGaxSe2 film. Properties studied include the spatial uniformity, bulk defect response, carrier density, and light-induced metastable effects. These results indicate that previous estimates of carrier densities, from C\u2013V profiling, may be significantly overestimated. In addition, a defect response previously thought to be located at the interface is observed to exist throughout the bulk material. Finally, an infrared light-soaking treatment is demonstrated to induce metastable changes in the bulk CuIn1\u2212xGaxSe2 film. Hence, the drive-level capacitance profiling technique provides valuable insights into these films. Herein, the technique itself is fully explained, compared to other junction capacitance methods, and its utility is demonstrated using numerical simulation.</jats:p>",
  "DOI": "10.1063/1.1633982",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2004,
        1,
        25
      ]
    ],
    "date-time": "2004-01-25T04:12:46Z",
    "timestamp": 1075003966000
  },
  "page": "1000-1010",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 450,
  "title": "Bulk and metastable defects in CuIn1\u2212xGaxSe2 thin films using drive-level capacitance profiling",
  "prefix": "10.1063",
  "volume": "95",
  "author": [
    {
      "given": "Jennifer T.",
      "family": "Heath",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Department of Physics, University of Oregon, Eugene, Oregon\u200997403"
        }
      ]
    },
    {
      "given": "J. David",
      "family": "Cohen",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Physics, University of Oregon, Eugene, Oregon\u200997403"
        }
      ]
    },
    {
      "given": "William N.",
      "family": "Shafarman",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Institute of Energy Conversion, University of Delaware, Newark, Delaware\u200919716"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020718083106800_r1",
      "doi-asserted-by": "crossref",
      "first-page": "131",
      "DOI": "10.1007/s003390050984",
      "volume": "69",
      "year": "1999",
      "journal-title": "Appl. Phys. A: Mater. Sci. Process."
    },
    {
      "key": "2024020718083106800_r2",
      "first-page": "H",
      "volume": "668",
      "year": "2001",
      "journal-title": "Mater. Res. Soc. Symp. Proc."
    },
    {
      "key": "2024020718083106800_r3",
      "first-page": "H9",
      "volume": "668",
      "year": "2001",
      "journal-title": "Mater. Res. Soc. Symp. Proc."
    },
    {
      "key": "2024020718083106800_r4",
      "doi-asserted-by": "crossref",
      "first-page": "43",
      "DOI": "10.1007/s100510050666",
      "volume": "8",
      "year": "1999",
      "journal-title": "Eur. Phys. J.: Appl. Phys."
    },
    {
      "key": "2024020718083106800_r5",
      "doi-asserted-by": "crossref",
      "first-page": "4282",
      "DOI": "10.1063/1.366252",
      "volume": "82",
      "year": "1997",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020718083106800_r6",
      "doi-asserted-by": "crossref",
      "first-page": "4849",
      "DOI": "10.1021/jp993143k",
      "volume": "104",
      "year": "2000",
      "journal-title": "J. Phys. Chem. B"
    },
    {
      "key": "2024020718083106800_r7",
      "doi-asserted-by": "crossref",
      "first-page": "4678",
      "DOI": "10.1063/1.367254",
      "volume": "83",
      "year": "1998",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020718083106800_r8",
      "doi-asserted-by": "crossref",
      "first-page": "412",
      "DOI": "10.1063/1.96129",
      "volume": "47",
      "year": "1985",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020718083106800_r9",
      "doi-asserted-by": "crossref",
      "first-page": "318",
      "DOI": "10.1063/1.366686",
      "volume": "83",
      "year": "1998",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020718083106800_r10",
      "first-page": "1103",
      "volume": "ED-19",
      "year": "1972",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020718083106800_r11",
      "doi-asserted-by": "crossref",
      "first-page": "3726",
      "DOI": "10.1063/1.1658262",
      "volume": "40",
      "year": "1969",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020718083106800_r12",
      "doi-asserted-by": "crossref",
      "first-page": "2204",
      "DOI": "10.1063/1.321865",
      "volume": "46",
      "year": "1975",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020718083106800_r13",
      "doi-asserted-by": "crossref",
      "first-page": "6839",
      "DOI": "10.1063/1.363750",
      "volume": "80",
      "year": "1996",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020718083106800_r14",
      "doi-asserted-by": "crossref",
      "first-page": "4411",
      "DOI": "10.1063/1.363401",
      "volume": "80",
      "year": "1996",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020718083106800_r15",
      "doi-asserted-by": "crossref",
      "first-page": "7776",
      "DOI": "10.1103/PhysRevB.35.7776",
      "volume": "35",
      "year": "1987",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020718083106800_r16",
      "doi-asserted-by": "crossref",
      "first-page": "723",
      "DOI": "10.1063/1.104527",
      "volume": "58",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020718083106800_r17",
      "doi-asserted-by": "crossref",
      "first-page": "16985",
      "DOI": "10.1103/PhysRevB.50.16985",
      "volume": "50",
      "year": "1994",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020718083106800_r18",
      "doi-asserted-by": "crossref",
      "first-page": "5321",
      "DOI": "10.1103/PhysRevB.25.5321",
      "volume": "25",
      "year": "1982",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020718083106800_r19",
      "first-page": "H2",
      "volume": "668",
      "year": "2001",
      "journal-title": "Mater. Res. Soc. Symp. Proc."
    },
    {
      "key": "2024020718083106800_r20",
      "first-page": "180",
      "volume": "205\u2013207",
      "year": "1996",
      "journal-title": "J. Non-Cryst. Solids"
    },
    {
      "key": "2024020718083106800_r21",
      "doi-asserted-by": "crossref",
      "first-page": "289",
      "DOI": "10.1016/0379-6787(86)90091-8",
      "volume": "16",
      "year": "1986",
      "journal-title": "Sol. Cells"
    },
    {
      "key": "2024020718083106800_r22",
      "doi-asserted-by": "crossref",
      "first-page": "87",
      "DOI": "10.1016/S0167-577X(96)00133-4",
      "volume": "29",
      "year": "1996",
      "journal-title": "Mater. Lett."
    },
    {
      "key": "2024020718083106800_r23",
      "doi-asserted-by": "crossref",
      "first-page": "7324",
      "DOI": "10.1063/1.361431",
      "volume": "79",
      "year": "1996",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020718083106800_r24",
      "doi-asserted-by": "crossref",
      "first-page": "4540",
      "DOI": "10.1063/1.1485301",
      "volume": "80",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020718083106800_r25",
      "first-page": "588",
      "volume": "12",
      "year": "1937",
      "journal-title": "Z. Tech. Phys. (Leipzig)"
    },
    {
      "key": "2024020718083106800_r26"
    },
    {
      "key": "2024020718083106800_r27",
      "doi-asserted-by": "crossref",
      "first-page": "199",
      "DOI": "10.1016/0038-1098(93)90475-3",
      "volume": "87",
      "year": "1993",
      "journal-title": "Solid State Commun."
    },
    {
      "key": "2024020718083106800_r28",
      "doi-asserted-by": "crossref",
      "first-page": "2888",
      "DOI": "10.1063/1.117352",
      "volume": "69",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020718083106800_r29"
    },
    {
      "key": "2024020718083106800_r30",
      "doi-asserted-by": "crossref",
      "first-page": "497",
      "DOI": "10.1063/1.370758",
      "volume": "86",
      "year": "1999",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020718083106800_r31",
      "doi-asserted-by": "crossref",
      "first-page": "5765",
      "DOI": "10.1063/1.363631",
      "volume": "80",
      "year": "1996",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020718083106800_r32",
      "doi-asserted-by": "crossref",
      "first-page": "4322",
      "DOI": "10.1063/1.368651",
      "volume": "84",
      "year": "1998",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020718083106800_r33",
      "first-page": "403",
      "volume": "67\u201368",
      "year": "1999",
      "journal-title": "Solid State Phenom."
    },
    {
      "key": "2024020718083106800_r34",
      "doi-asserted-by": "crossref",
      "first-page": "2598",
      "DOI": "10.1063/1.1467621",
      "volume": "80",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020718083106800_r35",
      "doi-asserted-by": "crossref",
      "first-page": "318",
      "DOI": "10.1063/1.366686",
      "volume": "83",
      "year": "1998",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020718083106800_r36",
      "doi-asserted-by": "crossref",
      "first-page": "497",
      "DOI": "10.1063/1.370758",
      "volume": "86",
      "year": "1999",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020718083106800_r37"
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/95/3/1000/18707944/1000_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/95/3/1000/18707944/1000_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        7
      ]
    ],
    "date-time": "2024-02-07T23:55:02Z",
    "timestamp": 1707350102000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/95/3/1000/770555/Bulk-and-metastable-defects-in-CuIn1-xGaxSe2-thin"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2004,
        2,
        1
      ]
    ]
  },
  "references-count": 37,
  "journal-issue": {
    "issue": "3",
    "published-print": {
      "date-parts": [
        [
          2004,
          2,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1633982",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2004,
        2,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2004,
        2,
        1
      ]
    ]
  }
}