Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We have fabricated Pt/C composite nanowires and nanowire transistors, using the technique of electron-beam-induced deposition. The current-voltage characteristics of the granular nanowires are strongly nonlinear at 4.2 K, and evidence for this nonlinearity is found to persist to room temperature. A voltage gap of order 0.1–0.2 V is observed at the lowest temperatures, and we suggest that this feature is consistent with single-electron tunneling via Pt nanocrystals that form in the wires during their fabrication. In order to further explore this possibility, we incorporate the nanowires into three-terminal transistor structures and find evidence for a gate-induced modulation of their voltage gap.

Bibliography

Rotkina, L., Lin, J.-F., & Bird, J. P. (2003). Nonlinear current-voltage characteristics of Pt nanowires and nanowire transistors fabricated by electron-beam deposition. Applied Physics Letters, 83(21), 4426–4428.

Authors 3
  1. L. Rotkina (first)
  2. J.-F. Lin (additional)
  3. J. P. Bird (additional)
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Dates
Type When
Created 21 years, 9 months ago (Nov. 22, 2003, 6:53 p.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 8:54 p.m.)
Indexed 1 year ago (Aug. 5, 2024, 2:32 p.m.)
Issued 21 years, 8 months ago (Nov. 24, 2003)
Published 21 years, 8 months ago (Nov. 24, 2003)
Published Print 21 years, 8 months ago (Nov. 24, 2003)
Funders 0

None

@article{Rotkina_2003, title={Nonlinear current-voltage characteristics of Pt nanowires and nanowire transistors fabricated by electron-beam deposition}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1629382}, DOI={10.1063/1.1629382}, number={21}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rotkina, L. and Lin, J.-F. and Bird, J. P.}, year={2003}, month=nov, pages={4426–4428} }