DOI: 10.1063/1.1626791. Long coherence times at 300 K for nitrogen-vacancy center spins in diamond grown by chemical vapor deposition

Long coherence times at 300 K for nitrogen-vacancy center spins in diamond grown by chemical vapor deposition

10.1063/1.1626791

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Electron-spin-echo experiments reveal phase-memory times as long as 58 μs at 300 K for nitrogen-vacancy centers in chemical vapor deposition (CVD) single crystals. The spins were optically polarized and optically detected. Two high-quality CVD samples were studied. From the current results, it is not clear whether these phase-memory times represent a fundamental limit or are limited by an external source of decoherence.

Bibliography

Kennedy, T. A., Colton, J. S., Butler, J. E., Linares, R. C., & Doering, P. J. (2003). Long coherence times at 300 K for nitrogen-vacancy center spins in diamond grown by chemical vapor deposition. Applied Physics Letters, 83(20), 4190â4192.

Authors 5

T. A. Kennedy (first)
J. S. Colton (additional)
J. E. Butler (additional)
R. C. Linares (additional)
P. J. Doering (additional)

References 18 Referenced 155

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Dates

Type	When
Created	21 years, 9 months ago (Nov. 14, 2003, 9:22 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 8:51 p.m.)
Indexed	1 week, 1 day ago (Aug. 19, 2025, 6:58 a.m.)
Issued	21 years, 9 months ago (Nov. 17, 2003)
Published	21 years, 9 months ago (Nov. 17, 2003)
Published Print	21 years, 9 months ago (Nov. 17, 2003)

Funders 0

None

BibTeX

@article{Kennedy_2003, title={Long coherence times at 300 K for nitrogen-vacancy center spins in diamond grown by chemical vapor deposition}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1626791}, DOI={10.1063/1.1626791}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kennedy, T. A. and Colton, J. S. and Butler, J. E. and Linares, R. C. and Doering, P. J.}, year={2003}, month=nov, pages={4190–4192} }

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