Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Ferroelectric BiFeO3 thin films have been prepared on Pt/TiO2/SiO2/Si substrates in various oxygen pressures of 0.001–0.1 Torr at a temperature as low as 450 °C by pulsed-laser deposition. The crystallinity of the films was studied by x-ray diffraction. X-ray photoelectron spectroscopy showed that the films have a single phase of perovskite BiFeO3. The BiFeO3 thin films deposited at 0.01–0.1 Torr show good current-density–applied-voltage characteristics. It is obtained from polarization–electric-field characterization that 2Pr is about 71.3 μC/cm2 and 2Ec is 125 kV/cm. Stable current density and saturated ferroelectric hysteresis loop have been observed in BiFeO3 thin films.

Bibliography

Yun, K. Y., Noda, M., & Okuyama, M. (2003). Prominent ferroelectricity of BiFeO3 thin films prepared by pulsed-laser deposition. Applied Physics Letters, 83(19), 3981–3983.

Authors 3
  1. Kwi Young Yun (first)
  2. Minoru Noda (additional)
  3. Masanori Okuyama (additional)
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Dates
Type When
Created 21 years, 9 months ago (Nov. 7, 2003, 9:21 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 8:51 p.m.)
Indexed 4 months, 1 week ago (April 12, 2025, 9:17 p.m.)
Issued 21 years, 9 months ago (Nov. 10, 2003)
Published 21 years, 9 months ago (Nov. 10, 2003)
Published Print 21 years, 9 months ago (Nov. 10, 2003)
Funders 0

None

@article{Yun_2003, title={Prominent ferroelectricity of BiFeO3 thin films prepared by pulsed-laser deposition}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1626267}, DOI={10.1063/1.1626267}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yun, Kwi Young and Noda, Minoru and Okuyama, Masanori}, year={2003}, month=nov, pages={3981–3983} }