Abstract
Ferroelectric BiFeO3 thin films have been prepared on Pt/TiO2/SiO2/Si substrates in various oxygen pressures of 0.001–0.1 Torr at a temperature as low as 450 °C by pulsed-laser deposition. The crystallinity of the films was studied by x-ray diffraction. X-ray photoelectron spectroscopy showed that the films have a single phase of perovskite BiFeO3. The BiFeO3 thin films deposited at 0.01–0.1 Torr show good current-density–applied-voltage characteristics. It is obtained from polarization–electric-field characterization that 2Pr is about 71.3 μC/cm2 and 2Ec is 125 kV/cm. Stable current density and saturated ferroelectric hysteresis loop have been observed in BiFeO3 thin films.
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Dates
Type | When |
---|---|
Created | 21 years, 9 months ago (Nov. 7, 2003, 9:21 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 8:51 p.m.) |
Indexed | 4 months, 1 week ago (April 12, 2025, 9:17 p.m.) |
Issued | 21 years, 9 months ago (Nov. 10, 2003) |
Published | 21 years, 9 months ago (Nov. 10, 2003) |
Published Print | 21 years, 9 months ago (Nov. 10, 2003) |
@article{Yun_2003, title={Prominent ferroelectricity of BiFeO3 thin films prepared by pulsed-laser deposition}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1626267}, DOI={10.1063/1.1626267}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yun, Kwi Young and Noda, Minoru and Okuyama, Masanori}, year={2003}, month=nov, pages={3981–3983} }