DOI: 10.1063/1.1622799. Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/V s

Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/V s

10.1063/1.1622799

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect mobility μ∼8 cm2/V s, substantially higher than that observed in thin-film OFETs. The single-crystal devices compare favorably with thin-film OFETs not only in this respect: the mobility for the single-crystal devices is nearly independent of the gate voltage and the field effect onset is very sharp. The subthreshold slope as small as S=0.85 V/decade has been observed for a gate insulator capacitance Ci=2±0.2 nF/cm2. This corresponds to the intrinsic subthreshold slope Si≡SCi at least one order of magnitude smaller than that for the best thin-film OFETs and amorphous hydrogenated silicon (α-Si:H) devices.

Bibliography

Podzorov, V., Sysoev, S. E., Loginova, E., Pudalov, V. M., & Gershenson, M. E. (2003). Single-crystal organic field effect transistors with the hole mobility â¼8âcm2/Vâs. Applied Physics Letters, 83(17), 3504â3506.

Authors 5

V. Podzorov (first)
S. E. Sysoev (additional)
E. Loginova (additional)
V. M. Pudalov (additional)
M. E. Gershenson (additional)

References 26 Referenced 392

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Dates

Type	When
Created	21 years, 10 months ago (Oct. 23, 2003, 10:47 p.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 8:46 p.m.)
Indexed	1 month, 3 weeks ago (July 14, 2025, 11:47 p.m.)
Issued	21 years, 10 months ago (Oct. 27, 2003)
Published	21 years, 10 months ago (Oct. 27, 2003)
Published Print	21 years, 10 months ago (Oct. 27, 2003)

Funders 0

None

BibTeX

@article{Podzorov_2003, title={Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/V s}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1622799}, DOI={10.1063/1.1622799}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Podzorov, V. and Sysoev, S. E. and Loginova, E. and Pudalov, V. M. and Gershenson, M. E.}, year={2003}, month=oct, pages={3504–3506} }

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