DOI: 10.1063/1.1622117. Study of a growth instability of γ-In2Se3

Study of a growth instability of γ-In2Se3

10.1063/1.1622117

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

γ- In 2 Se 3 thin film are deposited for various substrate temperatures in the range of 523–673 K. This study shows that at 573 and 673 K the thin films are well crystallized with grains aligned along the c axis. Between these temperatures, a domain of instability appears where the γ-In2Se3 thin films have a randomly orientation and the c-lattice parameter increases. The presence of the metastable phase κ-In2Se3, during the growth, can explain the existence of this domain of instability. The insertion of Zn during the preparation process allows us to stabilize the phase κ at room temperature which confirms our hypothesis that the presence of κ-In2Se3 perturbs the crystallization of γ-In2Se3. The increase of the c-lattice parameter can be explain by the fact that κ-In2Se3 has a larger unit cell than γ-In2Se3 or by a competition during the growth between the grains of both phases which could generate constraints along the c axis. During the cooling, the κ phase disappears in favor of the γ phase.

Bibliography

Amory, C., BernÃ¨de, J. C., & Marsillac, S. (2003). Study of a growth instability of Î³-In2Se3. Journal of Applied Physics, 94(10), 6945â6948.

Authors 3

C. Amory (first)
J. C. Bernède (additional)
S. Marsillac (additional)

References 14 Referenced 54

10.1016/S0025-5408(97)00243-2 / Mater. Res. Bull. (1998)
{'key': '2024020717312692000_r2', 'first-page': '1', 'volume': '34', 'year': '1978', 'journal-title': 'Acta Crystallogr., Sect. B: Struct. Crystallogr. Cryst. Chem.'} / Acta Crystallogr., Sect. B: Struct. Crystallogr. Cryst. Chem. (1978)
10.1006/jssc.1996.0241 / J. Solid State Chem. (1996)
10.1143/JJAP.37.4264 / Jpn. J. Appl. Phys., Part 1 (1998)
10.1016/0022-3697(62)90052-5 / J. Phys. Chem. Solids (1962)
10.1016/0022-3697(63)90040-4 / J. Phys. Chem. Solids (1963)
10.1016/0022-4596(80)90551-4 / J. Solid State Chem. (1980)
10.1063/1.1355287 / J. Appl. Phys. (2001)
10.1063/1.1526925 / Appl. Phys. Lett. (2002)
{'key': '2024020717312692000_r10'}
10.1143/JJAP.40.509 / Jpn. J. Appl. Phys., Part 1 (2001)
{'key': '2024020717312692000_r12'}
10.1016/S0169-4332(02)00172-1 / Appl. Surf. Sci. (2002)
{'key': '2024020717312692000_r14'}

Dates

Type	When
Created	21 years, 9 months ago (Nov. 7, 2003, 9:21 a.m.)
Deposited	1 year, 6 months ago (Feb. 7, 2024, 6:21 p.m.)
Indexed	1 year ago (Aug. 7, 2024, 1:54 p.m.)
Issued	21 years, 9 months ago (Nov. 15, 2003)
Published	21 years, 9 months ago (Nov. 15, 2003)
Published Print	21 years, 9 months ago (Nov. 15, 2003)

Funders 0

None

BibTeX

@article{Amory_2003, title={Study of a growth instability of γ-In2Se3}, volume={94}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1622117}, DOI={10.1063/1.1622117}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Amory, C. and Bernède, J. C. and Marsillac, S.}, year={2003}, month=nov, pages={6945–6948} }

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