DOI: 10.1063/1.1618946. A study of the threshold voltage in pentacene organic field-effect transistors

A study of the threshold voltage in pentacene organic field-effect transistors

10.1063/1.1618946

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The threshold voltage and carrier mobilities were characterized in pentacene-based organic field-effect transistors with gold top-contact electrodes for different thickness of the pentacene film. The thickness of the semiconductor layer influences the values of the threshold voltage and, to a lesser extent, the saturation current. In this letter, we show that the thickness-dependent part of the threshold voltage results from the presence of an injection barrier at the gold–pentacene contact. We also show how the ratio between the gate insulator thickness and the semiconductor layer thickness alter the value for the saturation current, and therefore produces values for the field-effect mobility that are too low.

Bibliography

Schroeder, R., Majewski, L. A., & Grell, M. (2003). A study of the threshold voltage in pentacene organic field-effect transistors. Applied Physics Letters, 83(15), 3201â3203.

Authors 3

R. Schroeder (first)
L. A. Majewski (additional)
M. Grell (additional)

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Dates

Type	When
Created	21 years, 10 months ago (Oct. 16, 2003, 6:20 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 8:39 p.m.)
Indexed	1 month ago (July 25, 2025, 6:19 a.m.)
Issued	21 years, 10 months ago (Oct. 13, 2003)
Published	21 years, 10 months ago (Oct. 13, 2003)
Published Print	21 years, 10 months ago (Oct. 13, 2003)

Funders 0

None

BibTeX

@article{Schroeder_2003, title={A study of the threshold voltage in pentacene organic field-effect transistors}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1618946}, DOI={10.1063/1.1618946}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Schroeder, R. and Majewski, L. A. and Grell, M.}, year={2003}, month=oct, pages={3201–3203} }

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