DOI: 10.1063/1.1615293. ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy

ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy

10.1063/1.1615293

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report molecular-beam epitaxy growth of single crystalline ZnSe nanowires with uniform diameters (∼10 nm) on GaP(111) substrates. The growth process was based on the Au-catalyzed vapor-liquid-solid deposition. As determined by electron microdiffraction and high-resolution transmission electron microscopy, ZnSe nanowires grew generally along the 〈110〉 and 〈112〉 directions with the orientation relationship of (111)ZnSe wire//(111)GaP and 〈11̄0〉ZnSe wire//〈11̄0〉GaP. The dominant defects were found to be twins at the interface between the substrate and the nanowires along the (111) plane.

Bibliography

Chan, Y. F., Duan, X. F., Chan, S. K., Sou, I. K., Zhang, X. X., & Wang, N. (2003). ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy. Applied Physics Letters, 83(13), 2665â2667.

Authors 6

Y. F. Chan (first)
X. F. Duan (additional)
S. K. Chan (additional)
I. K. Sou (additional)
X. X. Zhang (additional)
N. Wang (additional)

References 17 Referenced 100

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{'key': '2024020401295544900_r2', 'first-page': '20', 'volume': '32', 'year': '1975', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (1975)
{'key': '2024020401295544900_r3', 'first-page': '2846', 'volume': '10', 'year': '1992', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1992)
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10.1063/1.122930 / Appl. Phys. Lett. (1998)
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10.1038/415617a / Nature (London) (2002)

Dates

Type	When
Created	21 years, 10 months ago (Sept. 25, 2003, 6:46 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 8:30 p.m.)
Indexed	17 hours, 18 minutes ago (Aug. 21, 2025, 1:09 p.m.)
Issued	21 years, 10 months ago (Sept. 29, 2003)
Published	21 years, 10 months ago (Sept. 29, 2003)
Published Print	21 years, 10 months ago (Sept. 29, 2003)

Funders 0

None

BibTeX

@article{Chan_2003, title={ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1615293}, DOI={10.1063/1.1615293}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chan, Y. F. and Duan, X. F. and Chan, S. K. and Sou, I. K. and Zhang, X. X. and Wang, N.}, year={2003}, month=sep, pages={2665–2667} }

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