Abstract
Self-nucleated bulk AlN crystals were grown by thermodecomposition of AlCl3⋅NH3 vaporized in the low-temperature zone of a two-zone furnace. X-ray diffraction of the AlN crystals show single lines with a small linewidth indicating high single-crystalline quality. Polarized Raman scattering experiments of these samples confirm the x-ray results based on the detection of a small linewidth for all allowed optical phonons. Low-temperature cathodoluminescence spectra show very sharp emission bands close to the optical band gap, which have been assigned to free-excitons A and B, and exciton-bound to shallow neutral impurity. The latter has a full width at half maximum smaller than 1.0 meV.
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Dates
Type | When |
---|---|
Created | 21 years, 11 months ago (Sept. 25, 2003, 6:46 p.m.) |
Deposited | 1 year, 7 months ago (Feb. 3, 2024, 8:33 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 7, 2024, 8:20 p.m.) |
Issued | 21 years, 11 months ago (Sept. 29, 2003) |
Published | 21 years, 11 months ago (Sept. 29, 2003) |
Published Print | 21 years, 11 months ago (Sept. 29, 2003) |
@article{Freitas_2003, title={Properties of Bulk AlN grown by thermodecomposition of AlCl3⋅NH3}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1614418}, DOI={10.1063/1.1614418}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Freitas, J. A. and Braga, G. C. B. and Silveira, E. and Tischler, J. G. and Fatemi, M.}, year={2003}, month=sep, pages={2584–2586} }