DOI: 10.1063/1.1613031. Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy

Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy

10.1063/1.1613031

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

High-k dielectric deposition processes for gate dielectric preparation on Si surfaces usually result in the unavoidable and uncontrolled formation of a thin interfacial oxide layer. Atomic layer deposition of ∼55-Å ZrO2 film on a Ge (100) substrate using ZrCl4 and H2O at 300 °C was found to produce local epitaxial growth [(001) Ge//(001) ZrO2 and [100] Ge//[100] ZrO2] without a distinct interfacial layer, unlike the situation observed when ZrO2 is deposited using the same method on Si. Relatively large lattice mismatch (∼10%) between ZrO2 and Ge produced a high areal density of interfacial misfit dislocations. Large hysteresis (&gt;200 mV) and high frequency dispersion were observed in capacitance–voltage measurements due to the high density of interface states. However, a low leakage current density, comparable to values obtained on Si substrates, was observed with the same capacitance density regardless of the high defect density.

Bibliography

Kim, H., Chui, C. O., Saraswat, K. C., & McIntyre, P. C. (2003). Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy. Applied Physics Letters, 83(13), 2647â2649.

Authors 4

Hyoungsub Kim (first)
Chi On Chui (additional)
Krishna C. Saraswat (additional)
Paul C. McIntyre (additional)

References 13 Referenced 126

10.1109/TED.2002.802675 / IEEE Trans. Electron Devices (2002)
{'key': '2024020401335117300_r2', 'first-page': '437', 'volume': '2002', 'year': '2002', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.'} / Tech. Dig. - Int. Electron Devices Meet. (2002)
{'key': '2024020401335117300_r3', 'first-page': '441', 'volume': '2002', 'year': '2002', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.'} / Tech. Dig. - Int. Electron Devices Meet. (2002)
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10.1126/science.288.5464.319 / Science (2000)
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{'key': '2024020401335117300_r8'}
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{'key': '2024020401335117300_r10'}
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Dates

Type	When
Created	21 years, 11 months ago (Sept. 25, 2003, 6:46 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 8:34 p.m.)
Indexed	1 month ago (July 28, 2025, 6:03 p.m.)
Issued	21 years, 11 months ago (Sept. 29, 2003)
Published	21 years, 11 months ago (Sept. 29, 2003)
Published Print	21 years, 11 months ago (Sept. 29, 2003)

Funders 0

None

BibTeX

@article{Kim_2003, title={Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1613031}, DOI={10.1063/1.1613031}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kim, Hyoungsub and Chui, Chi On and Saraswat, Krishna C. and McIntyre, Paul C.}, year={2003}, month=sep, pages={2647–2649} }

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