DOI: 10.1063/1.1610791. Drain voltage scaling in carbon nanotube transistors

Drain voltage scaling in carbon nanotube transistors

10.1063/1.1610791

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Decreasing the oxide thickness in carbon nanotube field-effect transistors (CNFETs) improves the turn-on behavior. However, we demonstrate that this also requires scaling the range of the drain voltage. This scaling is needed to avoid an exponential increase in off-current with drain voltage, due to modulation of the Schottky barriers at both the source and drain contact. We illustrate this with results for bottom-gated ambipolar CNFETs with oxides of 2 and 5 nm, and give an explicit scaling rule for the drain voltage. Above the drain voltage limit, the off-current becomes large and has equal electron and hole contributions. This allows the recently reported light emission from appropriately biased CNFETs.

Bibliography

RadosavljeviÄ, M., Heinze, S., Tersoff, J., & Avouris, Ph. (2003). Drain voltage scaling in carbon nanotube transistors. Applied Physics Letters, 83(12), 2435â2437.

Authors 4

M. Radosavljević (first)
S. Heinze (additional)
J. Tersoff (additional)
Ph. Avouris (additional)

References 14 Referenced 172

10.1103/PhysRevLett.87.256805 / Phys. Rev. Lett. (2001)
10.1103/PhysRevLett.89.126801 / Phys. Rev. Lett. (2002)
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10.1103/PhysRevB.66.073307 / Phys. Rev. B (2002)
10.1038/29954 / Nature (London) (1998)
10.1063/1.122477 / Appl. Phys. Lett. (1998)
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10.1126/science.1065824 / Science (2001)
10.1038/nmat769 / Nat. Mater. (2002)
10.1126/science.1081294 / Science (2003)
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{'key': '2024020401283325600_r13'}

Dates

Type	When
Created	21 years, 11 months ago (Sept. 18, 2003, 6:55 p.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 8:28 p.m.)
Indexed	4 months, 1 week ago (April 17, 2025, 1:49 a.m.)
Issued	21 years, 11 months ago (Sept. 22, 2003)
Published	21 years, 11 months ago (Sept. 22, 2003)
Published Print	21 years, 11 months ago (Sept. 22, 2003)

Funders 0

None

BibTeX

@article{Radosavljevi__2003, title={Drain voltage scaling in carbon nanotube transistors}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1610791}, DOI={10.1063/1.1610791}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Radosavljević, M. and Heinze, S. and Tersoff, J. and Avouris, Ph.}, year={2003}, month=sep, pages={2435–2437} }

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