Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Semiconductor-based single-electron transistors have been fabricated using heterostructure nanowire growth, by introducing a double barrier of InP into InAs nanowires. From electrical measurements, we observe a charging energy of 4 meV for the approximately 55 nm diameter and 100 nm long InAs islands between the InP barriers. The Coulomb blockade can be periodically lifted as a function of gate voltage for all devices, which is a typical signature of single-island transistors. Homogeneous InAs nanowires show no such effect for the corresponding voltage ranges.

Bibliography

Thelander, C., Mårtensson, T., Björk, M. T., Ohlsson, B. J., Larsson, M. W., Wallenberg, L. R., & Samuelson, L. (2003). Single-electron transistors in heterostructure nanowires. Applied Physics Letters, 83(10), 2052–2054.

Authors 7
  1. C. Thelander (first)
  2. T. Mårtensson (additional)
  3. M. T. Björk (additional)
  4. B. J. Ohlsson (additional)
  5. M. W. Larsson (additional)
  6. L. R. Wallenberg (additional)
  7. L. Samuelson (additional)
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Dates
Type When
Created 21 years, 11 months ago (Sept. 8, 2003, 11:02 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 8:21 p.m.)
Indexed 2 months, 2 weeks ago (June 14, 2025, 11:28 a.m.)
Issued 21 years, 11 months ago (Sept. 8, 2003)
Published 21 years, 11 months ago (Sept. 8, 2003)
Published Print 21 years, 11 months ago (Sept. 8, 2003)
Funders 0

None

@article{Thelander_2003, title={Single-electron transistors in heterostructure nanowires}, volume={83}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1606889}, DOI={10.1063/1.1606889}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Thelander, C. and Mårtensson, T. and Björk, M. T. and Ohlsson, B. J. and Larsson, M. W. and Wallenberg, L. R. and Samuelson, L.}, year={2003}, month=sep, pages={2052–2054} }